Temperature dependence of interface-state density distributions in Cu/ CuO/n-type Si structures

KARATAŞ Ş., EJDERHA K., BAKKALOĞLU Ö. F., EFEOĞLU H., Turut A. M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Türkiye, 28 - 30 Ağustos 2018, cilt.46, ss.7030-7032 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 46
  • Doi Numarası: 10.1016/j.matpr.2021.03.285
  • Basıldığı Şehir: Ardahan
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.7030-7032
  • Anahtar Kelimeler: Interface state densities, n-Si, I-V, C-V, Temperature, THIN-FILMS
  • Atatürk Üniversitesi Adresli: Evet

Özet

The interface state densities of Cu/CuO/n-Si Schottky structure were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements using Roderick and Card's methods in the temperature range 50-310 K. The interface state density (NSS) as a function of energy distribution (EC-ESS) was extracted from the forward-bias I-V measurements by taking into account the bias dependence of the effective barrier height and series resistance. Furthermore, the values of NSS obtained as a function of temperature. The experimental results have shown that the interface state densities (NSS) value of Cu/ CuO/n-Si Schottky structure decreases with increasing EC-ESS values as a function of temperature. Such behavior of interface state densities (NSS) has been explained with variation of the ideality factor as a function of temperature due to lateral inhomogeneities of the barrier height at the metal-semiconductor interface. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.