Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering

GÜLNAHAR M., EFEOĞLU H.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.509, sa.27, ss.7317-7323, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 509 Sayı: 27
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.jallcom.2011.03.170
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.7317-7323
  • Anahtar Kelimeler: Schottky barrier anomalies, Gaussian distribution, Richardson constant, Schottky diode, GaTe, Layered crystal, TUNNEL MOS DIODES, CURRENT-VOLTAGE, EXCITON PHOTOLUMINESCENCE, TEMPERATURE-DEPENDENCE, HEIGHT INHOMOGENEITIES, CAPACITANCE-VOLTAGE, ELECTRON-TRANSPORT, SCHOTTKY BARRIERS, CONTACTS
  • Atatürk Üniversitesi Adresli: Evet

Özet

A Molybdenum Schottky diode on unintentially doped p-GaTe was fabricated using DC sputtering. I-V characteristics of the fabricated diode were measured as a function of temperature at the range of 50-300 K. The barrier parameters of Mo/p-GaTe are interpreted using thermionic emission theory and inhomogeneities observed in the barrier are characterized with Gaussian distribution approach on the basis of parallel conduction model. The barrier height and the ideality factor values at 300K and at 80K of Mo/p-GaTe were calculated to be 0.581 eV, 1.097 and 0.472 eV, 1.349, respectively. The barrier parameters changed resolutely at 140-300K temperature range and a strong temperature dependence was observed below 130 K. The weighting coefficients, standard deviations and mean barrier heights were calculated for sub distributions. Richardson plot was interpreted with a new approach and Richardson constant was found to be 117.96AK(-2) cm(-2) for p-GaTe. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.