Electrothermal investigation of the switching effect in p-type TlInSe2, TlInTe2, and TlGaTe2, chain chalcogenide semiconductors

Abay B., Gurbulak B., Yildirim M., Efeoglu H., Tuzemen S., YOĞURTÇU Y. K.

JOURNAL OF ELECTRONIC MATERIALS, cilt.25, sa.7, ss.1054-1059, 1996 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 25 Sayı: 7
  • Basım Tarihi: 1996
  • Doi Numarası: 10.1007/bf02659902
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1054-1059
  • Anahtar Kelimeler: switching effect, TlGaTe2, TlInSe2, TlInTe2, SINGLE-CRYSTALS, PRESSURE, GLASSES, MEMORY
  • Atatürk Üniversitesi Adresli: Evet

Özet

Large p-type TlInSe2, TlInTe2, and TlGaTe2 single crystals have been grown by the Bridgman-Stockbarger method, starting from stoichiometric melts. The first observations of the switching process in p-type TlGaTe2 single crystal are reported. Current-voltage (I-V) characteristics of symmetrical In/p-TlInSe2/In, In/p-TlInTe2/In, and In/p-TlGaTe2/In structures exhibit two distinct regions: an ohmic region at low current densities and nonlinear regions (S-shape) having negative differential resistance (NDR) at moderate and higher current densities. An electrothermal model was used to explain the nonlinear behavior. The nonlinear behavior of the I-V curves was studied at different ambient temperatures in the 100-340K region; the sample temperature and the threshold voltage of the NDR region were examined as a function of the current density and the ambient temperature, respectively. The electrothermal model is a satisfactory explanation.