Electrothermal investigation of the switching effect in p-type TlInSe2, TlInTe2, and TlGaTe2, chain chalcogenide semiconductors
JOURNAL OF ELECTRONIC MATERIALS, cilt.25, sa.7, ss.1054-1059, 1996 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 25 Sayı: 7
- Basım Tarihi: 1996
- Doi Numarası: 10.1007/bf02659902
- Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.1054-1059
- Anahtar Kelimeler: switching effect, TlGaTe2, TlInSe2, TlInTe2, SINGLE-CRYSTALS, PRESSURE, GLASSES, MEMORY
- Atatürk Üniversitesi Adresli: Evet
Özet
Large p-type TlInSe2, TlInTe2, and TlGaTe2 single crystals have been grown by the Bridgman-Stockbarger method, starting from stoichiometric melts. The first observations of the switching process in p-type TlGaTe2 single crystal are reported. Current-voltage (I-V) characteristics of symmetrical In/p-TlInSe2/In, In/p-TlInTe2/In, and In/p-TlGaTe2/In structures exhibit two distinct regions: an ohmic region at low current densities and nonlinear regions (S-shape) having negative differential resistance (NDR) at moderate and higher current densities. An electrothermal model was used to explain the nonlinear behavior. The nonlinear behavior of the I-V curves was studied at different ambient temperatures in the 100-340K region; the sample temperature and the threshold voltage of the NDR region were examined as a function of the current density and the ambient temperature, respectively. The electrothermal model is a satisfactory explanation.