Zinc concentration effect on structural, optical and electrical properties of Cd1-xZnxSe thin films

AKALTUN Y., YILDIRIM M. A., ATEŞ A., YILDIRIM M.

MATERIALS RESEARCH BULLETIN, cilt.47, sa.11, ss.3390-3396, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 47 Sayı: 11
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.materresbull.2012.07.018
  • Dergi Adı: MATERIALS RESEARCH BULLETIN
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3390-3396
  • Anahtar Kelimeler: Chalcogenides, Chemical synthesis, Dielectric properties, Optical properties, REFRACTIVE-INDEX, SILAR METHOD, ENERGY-GAP, SEMICONDUCTORS, CDSE, SELENIDE, GROWTH
  • Atatürk Üniversitesi Adresli: Evet

Özet

Cd1-xZnxSe thin films with different compositions (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. The zinc concentration (x) effect on the structural, morphological, optical and electrical properties of Cd1-xZnxSe thin films were investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The energy dispersive X-ray (EDAX) analysis confirmed nearly stoichiometric deposition of the films. The energy bandgap values were changed from 1.99 to 2.82 eV depending on the zinc concentration. Bowing parameter was calculated as 0.08 eV. The electron effective mass (m(e)*/m(o)), refractive index (n), optical static and high frequency dielectric constants (epsilon(o), epsilon(infinity)) values were calculated by using the energy bandgap values as a function of the zinc concentration. The resistivity values of the films changed between 10(5) and 10(7) Omega cm with increasing zinc concentration at room temperature. (c) 2012 Elsevier Ltd. All rights reserved.