Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures

AYDOĞAN Ş., SAĞLAM M., Tueruet A.

MICROELECTRONIC ENGINEERING, cilt.85, sa.2, ss.278-283, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 2
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mee.2007.06.004
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.278-283
  • Anahtar Kelimeler: polyaniline, series resistance, Schottky contact, current voltage characteristics, organic/inorganic junction, CAPACITANCE-VOLTAGE CHARACTERISTICS, SCHOTTKY DIODES, BARRIER INHOMOGENEITIES, SERIES RESISTANCE, SI STRUCTURE, PARAMETERS, DEPENDENCE, TRANSPORT
  • Atatürk Üniversitesi Adresli: Evet

Özet

The electrical characterization of the PANI/p-Si/Al structure has been investigated by using current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics. Especially, some characteristics have been compared with the 300 K temperature characteristics at liquid nitrogen temperature. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the current-voltage measurements. According to the C-V characteristics, the higher values of capacitance at low frequencies and high temperature have been attributed to the excess capacitance resulting from the interface states in equilibrium with the p-Si, which can follow the a.c. signal. (c) 2007 Elsevier B.V. All rights reserved.