Effect of Substrate Temperature on Structural, Morphological, and Optical Properties of Gallium Oxide Thin Films Deposited by RF-Sputtering

Yildiz F., Akcay H., ASTAM A., KUNDAKÇI M.

Gazi University Journal of Science, cilt.37, sa.3, ss.1498-1507, 2024 (ESCI) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 37 Sayı: 3
  • Basım Tarihi: 2024
  • Doi Numarası: 10.35378/gujs.1275066
  • Dergi Adı: Gazi University Journal of Science
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus, Academic Search Premier, Aerospace Database, Aquatic Science & Fisheries Abstracts (ASFA), Communication Abstracts, Metadex, Civil Engineering Abstracts, TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.1498-1507
  • Anahtar Kelimeler: Gallium oxide, Nano structure, Sputter, Thin film
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this paper, gallium oxide (Ga2O3) thin films at various substrate temperatures (Ts) were grown on Indium Tin Oxide (ITO), glass, p-type silicon by radio-frequency magnetron sputtering (RFMS). We investigated how structural, morphological and optical properties change with various Ts. XRD results of thin films grown on p-type silicon substrate suggest that crystallinity properties of synthesized thin films strongly depend on the Ts. From SEM and AFM analyses of Ga2O3 thin films grown on p-type silicon substrate, it was observed that when the temperature increased, a porous structure appeared, and the grain size changed depending on the Ts. Moreover, obtained results from the absorption measurements, the bandgap energy of Ga2O3 thin films grown on the p-type silicon substrate decreased with increasing substrate temperature.