Electrical Characterization of In/p-GaSe:Cd/Au-Ge Single Crystal Grown by Bridgman/Stockbarger Method

GÜRBULAK B., Sata M., Ashkhasi A., YILDIRIM M., Duman S.

32nd International Physics Congress of Turkish-Physical-Society (TPS), Bodrum, Türkiye, 6 - 09 Eylül 2016, cilt.1815 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1815
  • Doi Numarası: 10.1063/1.4976476
  • Basıldığı Şehir: Bodrum
  • Basıldığı Ülke: Türkiye
  • Atatürk Üniversitesi Adresli: Evet

Özet

The temperature dependence of current voltage (I-V) characteristics of Au Ge/p-GaSe:Cd Schottky diode (SD) has been investigated in the temperature range of 40-360 K with a temperature step of 10 K under dark conditions. The characteristic parameters of the SD such as barrier height, ideality factor and series resistance have been determined from the I-V measurements. It has been shown that the ideality factor increases while the barrier height decreases with decreasing temperature. The values of series resistance obtained from modified Norde's function. Series resistance values increase with decreasing temperature.