Determination of the density distribution of interface states from high- and low-frequency capacitance characteristics of the tin/organic pyronine-B/p-type silicon structure

Cakar M., Temirci C., Turut A.

CHEMPHYSCHEM, cilt.3, sa.8, ss.701-705, 2002 (SCI-Expanded, Scopus) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 3 Sayı: 8
  • Basım Tarihi: 2002
  • Dergi Adı: CHEMPHYSCHEM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.701-705
  • Atatürk Üniversitesi Adresli: Evet

Özet

The interface state energy distribution curve of the Sn/ pyronine-B/p-Si Schottky diode has been obtained from its forward-bias C-HF and C-IF characteristics (see picture). The interface state density value rises exponentially with bias from the midgap towards the top of the valence band. The interface states and interfacial layer at the organic semiconductor/ inorganic semiconductor structures play an important role in the determination of the Schottky barrier height.