Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes

Dogan H., Yildirim N., Turut A.

MICROELECTRONIC ENGINEERING, cilt.85, sa.4, ss.655-658, 2008 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 4
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mee.2007.12.007
  • Dergi Adı: MICROELECTRONIC ENGINEERING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.655-658
  • Atatürk Üniversitesi Adresli: Evet

Özet

We have identically prepared as many as eight Ni/n-GaAs/In Schottky barrier diodes (SBDs) using an n-type GaAs substrate with a doping density of about 7.3 x 10(15) cm(-3). The thermal stability of the Ni/n-GaAs/In Schottky diodes has been investigated by means of current-voltage (I-V) techniques after annealed for 1 min in N-2 atmosphere from 200 to 700 degrees C. For Ni/n-GaAs/In SBDs, the Schottky barrier height Phi(b) and ideality factor it values range from 0.853 +/- 0.012 eV and 1.061 +/- 0.007 (for as-deposited sample) to 0.785 +/- 0.002 eV and 1.209 +/- 0.005 (for 600 degrees C annealing). The ideality factor values remained about unchanged up to 400 degrees C annealing. The I-V characteristics of the devices deteriorated at 700 degrees C annealing. (C) 2007 Elsevier B.V. All rights reserved.