On the studies of capacitance-voltage and impedance spectroscopy of an Ni/(GO-Fe3O4)/n-Si heterojunction device over a wide temperature range

Gumus I., AYDOĞAN Ş.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.35, sa.10, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 35 Sayı: 10
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1088/1361-6641/aba419
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Anahtar Kelimeler: capacitance-voltage, graphene oxide, GO-Fe(3)O(4)composite, heterojunction, Mott-Schottky, SERIES RESISTANCE, ELECTRICAL CHARACTERIZATION, INTERFACE STATES, V CHARACTERISTICS, SCHOTTKY DIODES, GRAPHENE OXIDE, SURFACE-STATES, THIN-FILM, C-V, SI
  • Atatürk Üniversitesi Adresli: Evet

Özet

The purpose of this work is to fabricate a Ni/GO-Fe3O4/n-Si heterojunction device using Mott-Schottky plots and to study the capacitance-voltage/conductance/series resistance characteristics of the device as a function of temperature. We analyzed temperature dependent capacitance-voltage measurements for the Ni/GO-Fe3O4/n-Si device in the temperature range from 80 to 360 K. Temperature dependent electrical measurements have been performed at a fixed frequency of 500 kHz and frequency dependent ones have been carried out at room temperature. In the reverse bias capacitance-voltage characteristics figure, it has been determined that the barrier height is 1.73 eV (80 K) and 1.50 eV (360 K) with 20 K steps. The impedance analysis measurements have been performed in the reverse and forward biases. The experimental results have shown that the values of capacitance, conductance, interface states and series resistanceR(s)depend on both bias voltage and temperature.