The effects of the time-dependent on the characteristic parameters of polypyrrole/p-type Si/Al diode

SAĞLAM M., KORUCU D., Türüt A.

POLYMER, cilt.45, sa.21, ss.7335-7340, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Sayı: 21
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1016/j.polymer.2004.08.026
  • Dergi Adı: POLYMER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.7335-7340
  • Anahtar Kelimeler: ageing, polymer/inorganic semiconductor structure, polypyrrole, SCHOTTKY-BARRIER DIODES, EXTRACTION, INTERFACE, FILMS
  • Atatürk Üniversitesi Adresli: Evet

Özet

A detailed study of the effects of the time-dependent or aging on the characteristic parameters of polypyrrole/p-type Si/Al structure has been presented. The polypyrrole film has been formed on a p-type Si substrate by means of an anodization process. The polypyrrole/p-Si contact has demonstrated clearly rectifying behavior by the current-voltage curves studied at room temperature. The current-voltage (I-V) curves of the diode have been measured immediately, 7, 15, 30, 60 and 90 days after fabrication of the polypyrrole/p-Si contact. It has been seen that the characteristics parameters such as barrier height, ideality factor and series resistance of polypyrrole/p-type Si/Al structure have changed with increasing ageing time. Furthermore, the density distribution of interface states of the device was obtained from the forward bias I-V characteristics. The fact that the diode shows non-ideal I-V behavior with increasing ageing time may be ascribed to a slow replacement of the initial doping agent by oxygen and this process certainly plays a role in the aging of the diode. (C) 2004 Elsevier Ltd. All rights reserved.