Mass attenuation coefficients for n-type InSe, InSe : Gd, InSe : Ho and InSeEr single crystals

Icelli O., Erzeneoglu S. Z., Gurbulak B.

JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, cilt.90, sa.3-4, ss.399-407, 2005 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 90 Sayı: 3-4
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.jqsrt.2004.04.012
  • Dergi Adı: JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.399-407
  • Anahtar Kelimeler: crystal growth, mass attenuation coefficients, transmission method, ABSORPTION-EDGE, OPTICAL-PROPERTIES, GROWTH, BROMIDES, ENERGIES, SYSTEM, SI
  • Atatürk Üniversitesi Adresli: Evet

Özet

Measurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746-40.930 keV X-ray energies with energy dispersive X-ray fluorescence systems. InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals were gown by using the stockbarger method. The measured values are graphically compared with the theoretical ones obtained using WinXcom. (C) 2004 Elsevier Ltd. All rights reserved.