Effects of surface passivation on capacitance-voltage and conductance-voltage characteristics of Al/p-type Si/Al and Al/V2O5/p-type Si/Al diodes

Şenarslan E., Güzeldir B., Sağlam M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.146, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 146
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.jpcs.2020.109564
  • Dergi Adı: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, Chimica, Compendex, INSPEC, Metadex
  • Anahtar Kelimeler: Metal-semiconductor and metal-interfacial layer-semiconductor structures, C-V and G/omega-V characteristics, Anodic surface passivation, Spray pyrolysis method, Series resistance, OXIDE THIN-FILMS, SCHOTTKY-BARRIER DIODES, ELECTRICAL CHARACTERISTICS, STRUCTURAL-PROPERTIES, EXCESS CAPACITANCE, OPTICAL-PROPERTIES, SERIES RESISTANCE, INTERFACE STATES, MOS STRUCTURES, V2O5
  • Atatürk Üniversitesi Adresli: Evet

Özet

Electrical properties of Al/p-type Si/Al metal-semiconductor and Al/V2O5/p-type Si/Al metal-interfacial layer-semiconductor diodes with and without anodic surface passivation are investigated by the capacitancevoltage (C-V) and conductance-voltage (G/omega-V) characteristics. The measurements were performed at various voltages from -2 V to 2 V in the frequency range from 50 kHz to 1 MHz at room temperature and in the dark. The barrier height, concentration of acceptor atoms, and diffusion potential of these diodes were determined from the linear C-2-V plots. The barrier heights increase for the MS and MIS diodes with anodic surface passivation. Furthermore, the series resistance and interface state density of the diodes were obtained by the Hill-Coleman method and the Nicollian-Goetzberger method, respectively. It is found that the anodic passivation process has a positive effect on these parameters.