Modification of exciton binding energy in the horizontal Bridgman-Stockbarger growth of InSe by Ho doping
JOURNAL OF APPLIED PHYSICS, cilt.96, sa.6, ss.3324-3327, 2004 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 96 Sayı: 6
- Basım Tarihi: 2004
- Doi Numarası: 10.1063/1.1773377
- Dergi Adı: JOURNAL OF APPLIED PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.3324-3327
- Atatürk Üniversitesi Adresli: Evet
Özet
Undoped InSe and Ho doped InSe single crystals with various Ho concentrations were grown by the horizontal Bridgman-Stockbarger method. The absorption measurements were carried out in the temperature range 10-320 K. Exciton binding energies, steepness parameters, and Urbach energies of InSe and InSe:Ho samples were investigated as a function of temperature. Ho doping caused a shift towards longer wavelengths in the absorption edge. In general, Ho doping causes certain increases in the exciton binding energy and Urbach energy, and a decrease in the steepness parameter. An enhancement of exciton binding energy up to about 55 meV is observed at 0.0025 mass ratio of Ho. (C) 2004 American Institute of Physics.