Modification of exciton binding energy in the horizontal Bridgman-Stockbarger growth of InSe by Ho doping

ATEŞ A., Tuzemen S., Yildirim M.

JOURNAL OF APPLIED PHYSICS, cilt.96, sa.6, ss.3324-3327, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 96 Sayı: 6
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1063/1.1773377
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3324-3327
  • Atatürk Üniversitesi Adresli: Evet

Özet

Undoped InSe and Ho doped InSe single crystals with various Ho concentrations were grown by the horizontal Bridgman-Stockbarger method. The absorption measurements were carried out in the temperature range 10-320 K. Exciton binding energies, steepness parameters, and Urbach energies of InSe and InSe:Ho samples were investigated as a function of temperature. Ho doping caused a shift towards longer wavelengths in the absorption edge. In general, Ho doping causes certain increases in the exciton binding energy and Urbach energy, and a decrease in the steepness parameter. An enhancement of exciton binding energy up to about 55 meV is observed at 0.0025 mass ratio of Ho. (C) 2004 American Institute of Physics.