Investigation of Copper-Iron Oxide Thin Film Grown by Co-Sputtering


sarıtaş s.

Bitlis Eren Üniversitesi Fen Bilimleri Dergisi, cilt.12, sa.3, ss.625-633, 2023 (Hakemli Dergi) identifier

Özet

In this study, the iron oxide and copper oxide structures were grown with the DC magnetron and RF magnetron sputtering respectively and the CuxFe3-xO4 structure was grown with the co-sputtering. Structural optical and topographic examination of the grown thin films has been done in detail. Absorption measurements of the thin films were taken with the help of a Perkin Elmer UV/Visible Lambda 2S spectrometer at room temperature. The value of the band gap energy with the fit drawn in the (ahυ)2 (cm-1 eV2) counter energy graph of Fe2O3, CuxFe3-xO4, Cu2O thin film is grown on glass was calculated as 2.44, 2.39, 2.55 eV respectively. Also, the structural and topographic properties of thin film structures were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. According to XPS results; the binding energies of the 2p32 orbital for the Fe3+ (Fe2O3) ion is 710.85 eV and for the Fe3+ (CuxFe3-xO4) ion is 712.49 eV. The binding energy of the 2p32 orbital for the Cu1+ (Cu2O) ion is 933.64 eV, and for the Cu2+ (CuxFe3-xO4) ion is 935.58 eV. O2- the binding energy of the 1s orbital of the ions are 529.95, 531.35 and 529.39 eV for Fe2O3, CuxFe3-xO4, and Cu2O respectively.