The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes

Karatas S., Turut A.

PHYSICA B-CONDENSED MATTER, cilt.381, ss.199-203, 2006 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 381
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1016/j.physb.2006.01.412
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.199-203
  • Anahtar Kelimeler: current voltage, metal-semiconductor structures, interface state density distributions, Schottky barrier diodes, SERIES RESISTANCE, CURRENT TRANSPORT, SI, PARAMETERS, SURFACE, HEIGHT, OXIDE, SEMICONDUCTOR
  • Atatürk Üniversitesi Adresli: Evet

Özet

The electronic and interface state density distribution properties obtained from current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-type GaAs Schottky barrier diode (SBD) at room temperature was investigated. SBD parameters such as ideality factor (n), series resistance (R-S) and barrier height (Phi(IV)) were obtained from I-V and C-V measurements using Cheung's method. The diode parameters such as ideality factor, series resistance and barrier heights were found as 1.51-1.78, 7.597-8.167 Omega and 0.88-1.14 eV, respectively. The diode shows non-ideal I-V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor. (c) 2006 Elsevier B.V. All rights reserved.