Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

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Atıf İçin Kopyala

CAKAR M., TURUT A., Onganer Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.15, sa.1, ss.47-53, 2004 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 15 Sayı: 1
• Basım Tarihi: 2004
• Doi Numarası: 10.1023/a:1026297105615
• Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.47-53
• Atatürk Üniversitesi Adresli: Evet

Özet

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate have been studied. The pyronine-B has been sublimed onto the top of p-Si surface. The barrier height and ideality factor values of 0.79 eV and 1.125 for this structure have been obtained from the forward-bias current-voltage characteristics. The density distribution of the interface states in the inorganic semiconductor bandgap and their relaxation time have been determined from the low-capacitance-frequency characteristics by the Schottky capacitance spectroscopy method. The measurement frequency varies from 90 Hz to 10 MHz. The interface state density N-ss ranges from 2.10 x 10(10) cm(-2) eV(-1) in (0.79 - E-v)eV to 1.16 x 10(12) cm(-2) eV(-1) in (0.53 - E-v)eV. Furthermore, the relaxation time ranges from 1.38 x 10(-3)s in (0.53-F-V)eV to 7.50 x 10(-3)s in (0.79-E-V)eV.