Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.15, sa.1, ss.47-53, 2004 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 15 Sayı: 1
- Basım Tarihi: 2004
- Doi Numarası: 10.1023/a:1026297105615
- Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.47-53
- Atatürk Üniversitesi Adresli: Evet
Özet
The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate have been studied. The pyronine-B has been sublimed onto the top of p-Si surface. The barrier height and ideality factor values of 0.79 eV and 1.125 for this structure have been obtained from the forward-bias current-voltage characteristics. The density distribution of the interface states in the inorganic semiconductor bandgap and their relaxation time have been determined from the low-capacitance-frequency characteristics by the Schottky capacitance spectroscopy method. The measurement frequency varies from 90 Hz to 10 MHz. The interface state density N-ss ranges from 2.10 x 10(10) cm(-2) eV(-1) in (0.79 - E-v)eV to 1.16 x 10(12) cm(-2) eV(-1) in (0.53 -