Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.36, sa.2, 2025 (SCI-Expanded)
This study reports the synthesis of tin (IV) oxide (SnO2) nanoparticles (NPs) using the micro-emulsion method and its performance on n-type Si semiconductors under various operating conditions. The physical characteristics of SnO2 were examined using XRD, SEM, TEM, and UV-Vis analysis. XRD analysis revealed that SnO2 has a crystalline structure with an average crystallite size of 14.4 nm. The optical band gap energy of SnO2 was determined as 3.4 eV using UV-Vis analysis. Additionally, the current-voltage (I-V) characteristics of the Au/SnO2/n-Si/Al and Au/n-Si/Al devices were measured in darkness to explore the influence of SnO2 nanomaterial on their electrical parameters. From the I-V measurements, the rectification ratio, saturation current, ideality factor, and barrier height values for the SnO2/n-Si device were determined to be 4.35 x 104 (at +/- 2 V), 1.96 x 10-9 A, 1.57, and 0.81 eV, respectively. For electro-optical characteristics of the SnO2/n-Si device, the I-V measurements were conducted under both visible light and UV light (365 nm) conditions. The SnO2/n-Si device, featuring a self-powered property, exhibited superior ON/OFF ratio, responsivity, and detectivity under UV light compared to white light illumination. Therefore, we can assert that the SnO2/n-Si device holds significant promise for sensitive light detection applications, particularly in UV-sensitive optoelectronic devices.