Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics

Fritah A., Saadoune A., Dehimi L., ABAY B.

Philosophical Magazine, cilt.96, sa.19, ss.2009-2026, 2016 (SCI-Expanded, Scopus)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 96 Sayı: 19
• Basım Tarihi: 2016
• Doi Numarası: 10.1080/14786435.2016.1185184
• Dergi Adı: Philosophical Magazine
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.2009-2026
• Anahtar Kelimeler: Schottky diodes, n-InP, I-V-T and C-V-T characteristics, simulation-Silvaco, transport mechanism, interface states and traps, CAPACITANCE-VOLTAGE CHARACTERISTICS, WIDE TEMPERATURE-RANGE, N-INP, BARRIER INHOMOGENEITIES, CURRENT-TRANSPORT, CONTACTS, SILICON, HEIGHT, TRAPS, GAAS
• Atatürk Üniversitesi Adresli: Evet