Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

YILMAZ M., YILDIRIM F., AYDOĞAN Ş., KOÇYİĞİT A.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.56, sa.49, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 56 Sayı: 49
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1088/1361-6463/acf8d4
  • Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: ZnO, photodiode, flake structures, capacitance, OPTICAL-PROPERTIES, ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, INTERFACE STATES, SCHOTTKY, FREQUENCY, PHOTODETECTORS, DIODES, LAYER
  • Atatürk Üniversitesi Adresli: Evet

Özet

ZnO flake interlayers were fabricated by the electrochemical deposition technique on p-Si to obtain Au/ZnO/p-Si heterostructures for Schottky-type photodiode applications and to test the capacitive performance of the structures. ZnO flake structures were investigated by x-ray diffractometry and scanning electron microscopy measurements, and their crystalline and flake-like structures were confirmed. The Au/ZnO/p-Si heterostructures were characterized by current-voltage (I-V) measurements for various illumination densities of light from dark to 150 mW cm-2. Various heterostructure parameters such as the ideality factor, barrier height, series resistance and rectifying ratio (RR) values were determined by I-V characteristics. The heterostructure exhibited a high RR of 6.85 x 103. The detection parameters revealed 0.49 mA W-1 responsivity and 2.69 x 109 Jones specific detectivity values. Furthermore, capacitance-voltage (C-V) measurements were employed to obtain the capacitive behavior of the Au/ZnO/p-Si heterostructure at various frequencies. Based on these results, Au/ZnO/p-Si heterostructures have potential for photodiode applications.