Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes

Akkilic K., Turut A., Cankaya G., Kilicoglu T.

SOLID STATE COMMUNICATIONS, cilt.125, sa.10, ss.551-556, 2003 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 125 Sayı: 10
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/s0038-1098(02)00829-3
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.551-556
  • Anahtar Kelimeler: semiconductors, surfaces and interfaces, thin films, electronic states (localized), ELECTRON-EMISSION MICROSCOPY, INDUCED GAP STATES, CONTACTS, INHOMOGENEITIES, TRANSPORT
  • Atatürk Üniversitesi Adresli: Evet

Özet

Our goal is to experimentally investigate whether or not the effective Schottky barrier heights (SBHs) and ideality factors obtained from the current-voltage (I-V) and capacitance -voltage (C-V) characteristics differ from diode to diode even if the samples were identically prepared. For this purpose, we prepared Cd/n-Si (33 dots) and Cd/p-Si (15 dots) diodes. The SBH for the Cd/n-Si diodes ranged from 0.701 to 0.605 eV, and ideality factor n from 1.913 to 1.213. Phi(b) value for the Cd/p-Si diodes ranged from 0.688 to 0.730 eV, and ideality factor n value from 1.473 to 1.040. The experimental SBH distributions obtained from the C-2-V and I-V characteristics were fitted by a Gaussian function and their mean SBH values were calculated. Furthermore, the laterally homogeneous barrier heights were also computed from the extrapolation of the linear plot of experimental barrier heights versus ideality factors. (C) 2003 Elsevier Science Ltd. All rights reserved.