The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction

Demir H. O., Çaldıran Z., Meral K., Şahin Y., Acar M., Aydoğan Ş.

E-POLYMERS, cilt.16, ss.75-82, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1515/epoly-2015-0170
  • Dergi Adı: E-POLYMERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.75-82
  • Anahtar Kelimeler: barrier height, ideality factor, inhomogeneity barrier, poly(phenoxyimine), polymer film, SERIES RESISTANCE, SCHOTTKY BARRIERS, DIODES, TRANSPORT, CONTACTS
  • Atatürk Üniversitesi Adresli: Evet

Özet

A poly(phenoxy-imine)/p-silicon rectifying device was fabricated and the current-voltage characteristics of the device were examined as a function of temperature in the 40-300 K range. The temperature dependence of the main parameters, namely, the barrier height (Phi(b)), ideality factor (eta), reverse current (I 0) and series resistance (R-s), were investigated. It was seen that the Phi(b) and the I-0 values of the device increased with increasing temperature, while the eta and the R-s values decreased. The temperature dependences of the Phi(b) and the eta were interpreted by the assumption of a Gaussian distribution of the barrier heights arising from barrier inhomogeneities that prevailed at the interface of the poly(phenoxyimine)/p-silicon. From ln(I-0/T-2) vs. 1/eta(T) plot, the values of the activation energy (E-a) and Richardson constant (A*) were calculated as 0.324 eV and 2.84 x 10(-7) A cm(-2)K(-2), respectively. The experimental value of the R-s from the forward current-voltage plots decreased with an increase in the temperature.