Akademik Veri Yönetim Sistemi
2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Türkiye, 28 - 30 Ağustos 2018, cilt.46, ss.6899-6903
In the present study, we investigated the optical and structural properties of reduced graphene oxide (rGO) thin film and some electrical properties of the Al/rGO/n-Si/Al heterojunction diode. Firstly, graphite oxide (GO) was synthesized by using the method of Hummers and Offeman. Subsequently, the reduction of GO was carried out with hydrazine hydrate by using a reflux system (at 100 = C for 18 hr). The rGO thin film was formed on n-type Si substrate through spin coating method and Al contacts were created to fabricate the diode. The absorption spectra of the thin film were taken in 200-500 nm wavelength range and the optical band gap of the film was found to be 3.65 eV. The morphological properties of the thin film formed on the n-Si substrate were analyzed by AFM and SEM. The electrical properties of Al/rGO/n-Si/ Al diode were investigated using the current-voltage (I-V) measurements. The diode exhibited rectification behavior with the ideality factor (n) of 1.06 and the barrier height (Ub) of 0.72 eV at room temperature. In addition, I-V characteristics of the diode were examined as a function of temperature in the 80- 300 K range. It was seen that the Ub and reverse saturation current (I0) values of the diode increased with increasing temperature, while the n values decreased. Furthermore, the electrical characteristic of Al/ rGO/n-Si/Al were compared with Al/n-Si/Al junction too. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.