Interface application of NiPt alloy nanoparticles decorated rGO nanocomposite to eliminate of contact problem between metal and inorganic/organic semiconductor

Baltakesmez A., SEVİM M., GÜZELDİR B., Aykaç C., Biber M.

Journal of Alloys and Compounds, cilt.867, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 867
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.jallcom.2021.158802
  • Dergi Adı: Journal of Alloys and Compounds
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Public Affairs Index, Civil Engineering Abstracts
  • Anahtar Kelimeler: Alloy nanoparticles, Reduced graphene oxide, Metal-semiconductor junction, Solar cell
  • Atatürk Üniversitesi Adresli: Evet

Özet

© 2021 Elsevier B.V.In this study, synthesis of monodisperse NiPt alloy NPs, preparation of rGO, decoration of the NPs onto the rGO and interface application of the NiPt/rGO nanocomposite material were presented. Morphological and structural analysis showed that Ni70Pt30 NPs having particle size of 2.2 ± 0.4 nm were obtained and decorated onto the rGO. The ID/IG intensity ratio of the rGO was determined to be 1.02. On the other hand, the Ni70Pt30/rGO nanocomposite was used as interface layer in junctions of the Al/lnP and P3HT:PCBM/Al. In the Al/lnP as inorganic metal-semiconductor junction, the interface layer caused an increase in rectification ratio of up to 103. Moreover, the ideality factor and barrier height enhanced from 1.47 and 0.49 eV to 1.24 and 0.67 eV at 300 K. It is attributed to eliminate of metal diffusion in lnP and passivation of pinning Fermi level. Additionally, the Ni70Pt30/rGO nanocomposite layer was used fabrication of the P3HT:PCBM solar cell to eliminate of S-shaped J-V curve. The reference solar cell having S-shaped J-V curve showed 6.081 mA/cm2 short circuit current density, 0.572 V open circuit voltage, 31.4% fill-factor and then 1.092% power conversion efficiency. The presence of the interface layer has caused an increase in the fill-factor value of more than 30%, while the PCE value increased by 15%. The best cell has 1.244% power conversion efficiency with 5.554 mA/cm2 short circuit current density, 0.544 V open circuit voltage, 41.2% fill-factor.