Synthesis characterization of SnO2 nanofibers (NFs) and application of high-performing photodetectors based on SnO2 NFs/n-Si heterostructure

Khalili S., Chenari H. M., ORHAN Z., Yildirim F., AYDOĞAN Ş.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.342, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 342
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.sna.2022.113631
  • Dergi Adı: SENSORS AND ACTUATORS A-PHYSICAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: SnO2 nanofibers, Heterojunction, Photodetector, Responsivity, Detectivity, ELECTRICAL CHARACTERISTICS, THIN-FILM, TEMPERATURE, LINE, PHOTOLUMINESCENCE, DEPENDENCE, NANOWIRES, PROFILES, DIODES
  • Atatürk Üniversitesi Adresli: Evet

Özet

We report a photodetector consisting of electrospun SnO2 nanofibers (NFs) on an n-type Si wafer as the SnO2 NFs/n-Si heterojunction architecture. The microstructure analysis of the SnO2 NFs was determined by utilizing the advanced X-ray diffraction approach (WPPM). The DRS spectrum and detailed photoluminescence (PL) measurements have been carried out to study the optical properties. In addition, the current-voltage, frequency dependent capacitance/conductance-voltage, and voltage-dependent capacitance-frequency measurements of the SnO2 NFs/n-Si device were analyzed in the dark. From the dark I-V measurements, the rectification ratio, reverse current, ideality factor, and barrier height were determined as 19631 (at +/- 2 V),-2.5 x 10(-9) A (at 2 V), 2.56, and 0.85 eV, respectively. Furthermore, the shunt resistance (Rsh) (at-2 V) and series resistance (Rs) (at +2 V) of the device were calculated as similar to 1.1 G omega and similar to 2.8 k omega, respectively from the dark I-V graphs. For the photodetector characteristics of the SnO2 NFs/n-Si device, the light intensity-dependent I-V measurements ranged from 20 mW/cm(2) to 150 mW/cm(2) were carried out in visible light in addition to UV light (365 nm and 395 nm). Experimental Rsh and Rs were also determined as a function of light intensity. The device's ON/OFF ratio, the detectivity, and the responsivity reached as high as 9576, 1.38 x 1011 Jones, and 0.66 A/W for 150 mW/cm2., at 1.5 V.