In situ optical assessment of semi-insulating iron doped InP grown by liquid encapsulated Czochralski process

Doğan S., TÜZEMEN S., GÜRBULAK B., Ates A., Yildirim M.

JOURNAL OF APPLIED PHYSICS, cilt.85, sa.9, ss.6777-6781, 1999 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 9
  • Basım Tarihi: 1999
  • Doi Numarası: 10.1063/1.370193
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.6777-6781
  • Atatürk Üniversitesi Adresli: Evet

Özet

In semi-insulating, Fe doped InP, we demonstrate that infrared absorption technique provides quantitative measurements of Fe concentrations. We show that the quantum efficiency is reduced more than 70% in Fe doped samples, in comparison to undoped samples. Relative near band edge photoluminescence (PL) intensity is antiproportional to Fe concentration. This can provide a calibration method to transform scanning PL images to quantitative Fe distributions. We demonstrate that infrared absorption mapping images Fe distribution in InP, in a similar way to EL2 imaging in GaAs. The images show that the slip-like defects decorated by Fe centers predominantly lie along [011] direction. (C) 1999 American Institute of Physics. [S0021-8979(99)04909-9].