In situ optical assessment of semi-insulating iron doped InP grown by liquid encapsulated Czochralski process
JOURNAL OF APPLIED PHYSICS, cilt.85, sa.9, ss.6777-6781, 1999 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 85 Sayı: 9
- Basım Tarihi: 1999
- Doi Numarası: 10.1063/1.370193
- Dergi Adı: JOURNAL OF APPLIED PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.6777-6781
- Atatürk Üniversitesi Adresli: Evet
Özet
In semi-insulating, Fe doped InP, we demonstrate that infrared absorption technique provides quantitative measurements of Fe concentrations. We show that the quantum efficiency is reduced more than 70% in Fe doped samples, in comparison to undoped samples. Relative near band edge photoluminescence (PL) intensity is antiproportional to Fe concentration. This can provide a calibration method to transform scanning PL images to quantitative Fe distributions. We demonstrate that infrared absorption mapping images Fe distribution in InP, in a similar way to EL2 imaging in GaAs. The images show that the slip-like defects decorated by Fe centers predominantly lie along [011] direction. (C) 1999 American Institute of Physics. [S0021-8979(99)04909-9].