An HBS@GaSe:Dy-Based Organic/Inorganic Hybrid Heterojunction for High-Performance Multicolor Photodetectors
ACS Applied Electronic Materials, cilt.7, sa.11, ss.4881-4887, 2025 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 7 Sayı: 11
- Basım Tarihi: 2025
- Doi Numarası: 10.1021/acsaelm.5c00317
- Dergi Adı: ACS Applied Electronic Materials
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex
- Sayfa Sayıları: ss.4881-4887
- Anahtar Kelimeler: photogating, hybrid heterojunction, multicolorphotodetector, GaSe, <italic>Hibiscus</italic> <italic>sabdariffa</italic>
- Atatürk Üniversitesi Adresli: Evet
Özet
Herein, a multicolor heterojunction photodetector was fabricated using organic Hibiscus sabdariffa (HBS) material and two-dimensional (2D) dysprosium-doped GaSe as an HBS@GaSe design. For the fabricated hybrid heterojunction, multicolor broadband photodetection covering UV-vis-NIR spectra is observed for the light power density of 7 mW/cm2, and the optoelectronic properties of the heterojunction photodetector were studied in detail. Electrooptical measurements were performed with I-V measurements under white light as well as under 365 nm violet (UV), 590 nm (yellow), and 850 nm IR light irradiation. For this purpose, the key parameters of a photodetector, such as ON/OFF ratio, responsivity, specific detectivity, NPDR, NEP, and EQE, have been calculated. Under illumination of 590 nm, a maximum ON/OFF ratio of 1.8 × 104 was observed for −1.76 V reverse bias. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 2166 mA/W, an EQE of 736%, and a high detectivity of 6.81 × 1012 Jones at 590 nm. The high responsivity was attributed to the interfacial traps, enhancing the photoconductivity gain. Our work suggests that the HBS@GaSe-based organic/inorganic hybrid heterojunction is a promising candidate for ultrasensitive multicolor photodetection.