Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

Erdogan E., KUNDAKÇİ M.

PHYSICA B-CONDENSED MATTER, cilt.506, ss.105-108, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 506
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.physb.2016.11.005
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.105-108
  • Anahtar Kelimeler: Current-voltage characteristics, Ag Schottky contact, InGaN, Room temperature, Schottky barrier diode, Thermionic vacuum arc (TVA), INGAN
  • Atatürk Üniversitesi Adresli: Evet

Özet

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1x10(-5) mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.