Synthesis and characterization of p-GaSe thin films and the analyses of I–V and C–V measurements of p-GaSe/p-Si heterojunction under electron irradiation
Radiation Effects And Defects In Solids, cilt.172, ss.650-663, 2017 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 172
- Basım Tarihi: 2017
- Doi Numarası: 10.1080/10420150.2017.1377713
- Dergi Adı: Radiation Effects And Defects In Solids
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.650-663
- Anahtar Kelimeler: Irradiation, heterojunction, electrodeposition, GaSe, XRD, AFM, CURRENT-VOLTAGE CHARACTERISTICS, SCHOTTKY-BARRIER DIODES, HIGH SERIES RESISTANCE, PARAMETERS, TEMPERATURE, PERFORMANCE, DETECTORS, SILICON, HEIGHT, EPR
- Atatürk Üniversitesi Adresli: Evet