Darbeli Lazer Biriktirme (PLD) Yöntemi ile Silisyum Alttaş Üzerine Bakır Oksit İnce Filmlerin Büyütülmesi

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Thesis Type: Postgraduate

Institution Of The Thesis: Ataturk University, Fen Bilimleri Enstitüsü, Nanobilim ve Nanomühendislik Anabilim Dalı, Turkey

Approval Date: 2019

Thesis Language: Turkish

Student: Gökhan UYGUR

Principal Supervisor (For Co-Supervisor Theses): Mustafa Tolga Yurtcan

Open Archive Collection: AVESIS Open Access Collection

Abstract:

In this thesis, pulse number, repetition frequency, target-substrate distance, laser excitation energy, heating and cooling speed were kept constant, pressure and temperature parameters were changed by using pulsed laser deposition (PLD) method and the best crystalline copper oxide growth on p-type silicon substrate was aimed. Crystalline growth was performed by changing the temperature between 300 - 500 ℃ 100 ℃ steps and pressure between 50 - 200 mTorr in 50 mTorr steps. Ultraviolet, visible light and near infrared (UV-VIS-NIR) absorption, Grazing Incidence X-ray Diffraction - GIXRD, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) techniques were used to determine the structure of thin films. The best result as a crystal structure of copper oxide thin film grown with PLD were obtained at low pressure and low temperature (300 ℃ and 100 mTorr). As a result of AFM analysis of copper oxide thin film grown at 300 ℃ and 100 mTorr pressure, the arithmetic mean roughness was determined as 2.19 nm and film thickness was determined as 400 - 460 nm. The smallest particle size in the expanded copper oxide thin films was 20 nm and the largest particle size was 140 nm. It was observed that the particle size increased with increasing temperature and pressure in copper oxide thin films.