Voltage-frequency dependence of the complex dielectric and electric modulus and the determination of the interface-state density distribution from the capacitance-frequency measurements of Al/<i>p</i>-Si/Al and Al/V<sub>2</sub>O<sub>5</sub>/<i>p</i>-Si/Al structures

ŞENARSLAN E., SAĞLAM M.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.130, sa.9, 2024 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 130 Sayı: 9
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1007/s00339-024-07758-3
  • Dergi Adı: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex
  • Anahtar Kelimeler: V2O5 thin film, Dielectric properties, Interface state density, Anodic surface passivation
  • Atatürk Üniversitesi Adresli: Evet

Özet

The energy distribution of the interface states (N-ss) and relaxation time (tau) are calculated from the capacitance-frequency (C-f) characteristics for Al/p-type Si/Al metal-semiconductor and Al/V2O5/p-type Si/Al metal-interfacial layer-semiconductor diodes with and without anodic surface passivation. The experimental results show that the density of the interface states and the relaxation times increase almost exponentially with the bias from the top of the valence band to the center of the gap for each diode produced. At the same time, using the C-f characteristics, the dielectric properties such as the dielectric constant (epsilon '), dielectric loss (epsilon ''), dielectric loss tangent (tan delta), real and imaginary portions of the electric modulus (M' and M '') and ac electrical conductivity (sigma(ac)) are investigated in this study. The analysis was performed at room temperature, in the frequency range from 1 kHz to 10 MHz, and the voltage range from 0 to 0.24 V. The experimental results show that the epsilon ', epsilon '' and tan delta values decrease with increasing frequency while sigma(ac), M ' and M '' values increase. This results will show that dielectric parameters are strongly frequency dependent.