Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation

CINAR K., AYDOĞAN Ş., Coskun C.

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, cilt.300, sa.3, ss.1113-1120, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 300 Sayı: 3
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1007/s10967-013-2908-x
  • Dergi Adı: JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1113-1120
  • Anahtar Kelimeler: GaTe, Schottky diode, Electrochemical deposition, XRD, AFM, SCHOTTKY-BARRIER DIODES, HIGH SERIES RESISTANCE, I-V CHARACTERISTICS, VOLTAGE CHARACTERISTICS, CONTACTS, FILMS, TEMPERATURE, BEHAVIOR
  • Atatürk Üniversitesi Adresli: Evet

Özet

We deposited GaTe thin films with electrochemical growth technique on p-Si (100) substrate and investigated their structural and electrical properties. The electrical characteristics of the Ti/GaTe/p-Si/Al Schottky diode (SD) were determined by means of I-V (current-voltage) and C-V (capacitance-voltage) measurements. The diodes were irradiated with high energy (18 MeV) and low doses (1.38 x 10(10) e(-) cm(-2)) electrons. The ideality factor values for Ti/GaTe/p-Si/Al structure were calculated as 1.27 and 1.53 and the barrier heights have been obtained as 0.739 and 0.706 eV from I-V measurements before and after each electron irradiations, respectively. Also, the parameters such as built-in potential, Fermi levels, acceptor concentration and barrier height of the Ti/GaTe/p-Si/Al SD have been calculated by the help of C-V measurements before and after each irradiations. The change in parameters was interpreted by the defect formation at the interface due to the electron irradiation.