Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS, cilt.33, ss.14627-14643, 2022 (SCI-Expanded)
It is well known that in metal–semiconductor rectifier junctions with an interface
layer, the drop potential across the interface layer modifies the barrier height by
changing the electric field in the semiconductor. Therefore, examining the barrier
characteristics of such structures depending on the sample temperature is
important in the development of novel devices. Based on this assumption, in
order to interpret the barrier characteristics of the Au/Graphene/p-Si/Al structure
in detail, its current–voltage (I–V) measurements were measured under dark
conditions in the temperature range of 120–320 K in 20 K steps. Graphene thin
film was grown on copper foil by plasma-enhanced chemical vapor deposition
(PECVD) method and then transferred as an interfacial layer on the clean and
polish surface of p-Si semiconductor base material made ohmic contact with
aluminum metal. After examining the morphological and optical properties of
the produced film, the gold metal was evaporated onto the film under vacuum
conditions to have a circular contact area of 1 mm diameter, as it is necessary for
electrical measurements. Various characteristic parameters such as ideality
factor, barrier height, saturation current, threshold voltage, rectifying ratio, and
series resistance of Au/Graphene/p-Si/Al structure were calculated from I–V
measurements taken depending on sample temperature using Rhoderick,
Norde, Cibils, and Chattopadhyay methods. The obtained results were interpreted
comparatively on the basis of Tung’s inhomogeneous barrier model.