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SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler
Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in Inhomogeneous Schottky Barrier Diodes
An experimental study: Dependence of Schottky diode parameters on Schottky contact area size
Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range
Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range
Formation of a Ti -> TiO2-graded layer and its effect on the memristive properties of TiOx(/Ti/TiOx) structures
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.33, sa.10, ss.7423-7434, 2022 (SCI-Expanded)
Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I-V characteristics in Au/Ti/Al2O3/n-GaAs structures
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.17, ss.22680-22688, 2021 (SCI-Expanded)
Single-step, large-area, variable thickness sputtered WS2 film-based field effect transistors
Characterization of electrical transport and properties of an Al/porous Si (PS)/p-Si/Al heterojunction
ZnO and ZnO1-x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior
Deposition of ZnO thin films by RF&DC magnetron sputtering on silicon and porous-silicon substrates for pyroelectric applications
On the studies of capacitance-voltage-temperature and deep level characteristics of an Au/p-GaTe Schottky diode
Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor
Resistive switching of reactive sputtered TiO2 based memristor in crossbar geometry
Porous Si Based Al Schottky Structures on p(+)-Si: A Possible Way for Nano Schottky Fabrication
Identification of Gases by Porous Optical Sensors Using Reflectivity Difference and Wavelength Shift
THE CURRENT-VOLTAGE CHARACTERISTICS OF THE Au/MBE n-GaAs SCHOTTKY DIODES IN A WIDE TEMPERATURE RANGE
Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's model
Novel Design of Porous Silicon Based Sensor for Reliable and Feasible Chemical Gas Vapor Detection
Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.15, sa.5, ss.480-485, 2012 (SCI-Expanded)
The effect of silicon loss and fabrication tolerance on spectral properties of porous silicon Fabry-Perot cavities in sensing applications
Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering
Anodization of aluminium thin films on p(++)Si and annihilation of strong luminescence from Al2O3
Single and Double Fabry-Perot Structure Based on Porous Silicon for Chemical Sensors
Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot
Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height
Electrodeposited ZnCoNi alloys
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.3, sa.3, ss.181-184, 2009 (SCI-Expanded)
Temperature-dependent current-voltage and capacitance-voltage characteristics of the Ag/n-InP/In Schottky diodes
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.20, sa.2, ss.105-112, 2009 (SCI-Expanded)
Electrical transport properties of p-GaTe grown by directional freezing method
A simple method producing shadow masks used in electrical characterization techniques
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
, cilt.46, sa.3, ss.410-412, 2003 (SCI-Expanded)
Temperature dependence of current-voltage characteristics of Sn/p-GaTe Schottky diodes
Formation of low and stable ohmic contacts to GaTe layered crystal
Low-temperature visible photoluminescence spectra of Tl2GaInSe4 layered crystals
Solvent effect on the ground and excited state dipole moments of fluorescein
Photoluminescence characterization of GaTe single crystals
Temperature dependence of the optical energy gap and Urbach-Martienssen's tail in the absorption spectra of the layered semiconductor Tl2GaInSe4
Journal of Physics and Chemistry of Solids
, cilt.62, sa.4, ss.747-752, 2001 (SCI-Expanded)
Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes
Thermal stability of Cr-Ni-Co alloy Schottky contacts on MBE n-GaAs
Characteristics of metallic polymer and Au Schottky contacts on cleaved surfaces of InSe(:Er)
High barrier metallic polymer/p-type silicon Schottky diodes
INTERPRETING THE NONIDEAL REVERSE BIAS C-V CHARACTERISTICS AND IMPORTANCE OF THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT ON APPLIED VOLTAGE
Structural defects and their electrical activity in germanium implanted silicon
Nuclear Inst. and Methods in Physics Research, B
, cilt.74, ss.127-130, 1993 (SCI-Expanded)
The impact of lattice dilation on deep states in MBE GaAs
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
Memristiv effect on W/Ti/p-Si structure: Aging phenomena and one of the origin of barrier inhomogeneity
2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Türkiye, 28 - 30 Ağustos 2018, cilt.46, ss.7033-7039, (Tam Metin Bildiri)
Temperature dependence of interface-state density distributions in Cu/ CuO/n-type Si structures
2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Türkiye, 28 - 30 Ağustos 2018, cilt.46, ss.7030-7032, (Tam Metin Bildiri)
İdeal Au/n-Si Schottky Yapısına Ait Kontak Engel Yüksekliğinin Deneysel Eldesi ve Gauss Dağılımı
Fotonik 2007, Aselsan, Türkiye, 28 Eylül 2007, (Özet Bildiri) 
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