Prof. Dr. Abdulmecit TÜRÜT

2024

1. Self-powered stable high-performance UV-Vis-NIR broadband photodetector based on PVP-Cobalt@Carbon nanofibers/n-GaAs heterojunction

Havigh R. S., YILDIRIM F., Chenari H. M., Turut A., AYDOĞAN Ş.

NANOTECHNOLOGY , cilt.35, sa.33, 2024 (SCI-Expanded, Scopus)

2023

2. An experimental study: Dependence of Schottky diode parameters on Schottky contact area size

EFEOĞLU H., Turut A., Gül M.

Optical Materials , cilt.142, 2023 (SCI-Expanded, Scopus)

2023

3. Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range

EFEOĞLU H., Turut A., Gül M.

Journal of Electronic Materials , cilt.52, sa.2, ss.1410-1418, 2023 (SCI-Expanded, Scopus)

2022

4. Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy n-Si/n(+)Si structures as a function of Schottky contact area

EFEOĞLU H., Turut A., Gul M.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , cilt.40, sa.5, 2022 (SCI-Expanded, Scopus)

2021

5. The temperature induced current transport characteristics in the orthoferrite YbFeO3-delta thin film/p-type Si structure

Polat O., Coskun M., Efeoglu H., Caglar M., Coskun F. M., Caglar Y., et al.

JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.33, sa.3, 2021 (SCI-Expanded, Scopus)

2019

6. The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures

Coskun M., Polat O., Coskun F. M., Efeoglu H., Caglar M., Durmus Z., et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.102, 2019 (SCI-Expanded, Scopus)

2019

7. Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

Coskun F. M., Polat O., Coskun M., Turut A., Caglar M., Durmus Z., et al.

JOURNAL OF APPLIED PHYSICS , cilt.125, sa.21, 2019 (SCI-Expanded, Scopus)

2017

8. Current-voltage characteristics of Au/ZnO/n-Si device in a wide range temperature

Kocyigit A., Orak I., Caldiran Z., Turut A.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.28, sa.22, ss.17177-17184, 2017 (SCI-Expanded, Scopus)

2016

9. Electronic Transport of an Ni/n-GaAs Diode Analysed Over a Wide Temperature Range

Guzel A., Duman S., Yildirim N., Turut A.

JOURNAL OF ELECTRONIC MATERIALS , cilt.45, sa.6, ss.2808-2814, 2016 (SCI-Expanded, Scopus)

2015

10. Determination of the some electronic parameters of nanostructure copper selenide and Cu/Cu3Se2/n-GaAs/In structure

Guzeldir B., Saglam M., Ates A., Turut A.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.627, ss.200-205, 2015 (SCI-Expanded, Scopus)

2015

11. The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography

Korucu D., Duman S., Turut A.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.30, ss.393-399, 2015 (SCI-Expanded, Scopus)

2014

12. Effect of temperature on the current (capacitance and conductance)-voltage characteristics of Ti/n-GaAs diode

Ejderha K., Duman S., Nuhoglu C., Urhan F., Turut A.

JOURNAL OF APPLIED PHYSICS , cilt.116, sa.23, 2014 (SCI-Expanded, Scopus)

2012

13. Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K

Korucu D., EFEOĞLU H., Turut A., Altindal S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.15, sa.5, ss.480-485, 2012 (SCI-Expanded, Scopus)

2012

14. On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique

Korucu D., Turut A., Turan R., Altindal S.

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY , cilt.55, sa.9, ss.1604-1612, 2012 (SCI-Expanded, Scopus)

2012

15. Determination of contact parameters of Ni/n-GaP Schottky contacts

Duman S., Ejderha K., Yigit O., Turut A.

MICROELECTRONICS RELIABILITY , cilt.52, sa.6, ss.1005-1011, 2012 (SCI-Expanded, Scopus)

2012

16. High barrier Schottky diode with organic interlayer

Gullu O., AYDOĞAN Ş., TURUT A.

SOLID STATE COMMUNICATIONS , cilt.152, sa.5, ss.381-385, 2012 (SCI-Expanded, Scopus)

2012

17. Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures

Gullu O., Pakma O., Turut A.

JOURNAL OF APPLIED PHYSICS , cilt.111, sa.4, 2012 (SCI-Expanded, Scopus)

2012

18. Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics

VURAL Ö., ŞAFAK ASAR Y., TÜRÜT A., ALTINDAL Ş.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.513, ss.107-111, 2012 (SCI-Expanded, Scopus)

2012

19. Temperature-dependent I-V characteristics in thermally annealed Co/p-InP contacts

Ejderha K., Yildirim N., Turut A., ABAY B.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.57, sa.1, 2012 (SCI-Expanded, Scopus)

2012

20. Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer

Gullu O., AYDOĞAN Ş., TURUT A.

THIN SOLID FILMS , cilt.520, sa.6, ss.1944-1948, 2012 (SCI-Expanded, Scopus)

2011

21. Effects of ageing on the electrical characteristics of Cd/CdS/n-Si/Au-Sb structure deposited by SILAR method

Guzeldir B., Saglam M., Ates A., Turut A.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , cilt.72, sa.12, ss.1506-1514, 2011 (SCI-Expanded, Scopus)

2011

22. The effects of 12 MeV electron irradiation on the electrical characteristics of the Au/Aniline blue/p-Si/Al device

AYDOĞAN Ş., İNCEKARA Ü., Turut A.

MICROELECTRONICS RELIABILITY , cilt.51, sa.12, ss.2216-2222, 2011 (SCI-Expanded, Scopus)

2011

23. Influence of 12 MeV electron irradiation on the electrical and photovoltaic properties of Schottky type solar cell based on Carmine

AYDOĞAN Ş., TURUT A.

RADIATION PHYSICS AND CHEMISTRY , cilt.80, sa.8, ss.869-875, 2011 (SCI-Expanded, Scopus)

2011

24. The effect of electron irradiation on the electrical characteristics of the Aniline Blue/n-Si/Al device

Aydoğan Ş., Şerifoğlu K., Turut A.

SOLID STATE SCIENCES , cilt.13, ss.1369-1374, 2011 (SCI-Expanded, Scopus)

2011

25. Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions

Akbay A., KORKUT H., EJDERHA K., Korkut T., TÜRÜT A.

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY , cilt.289, sa.1, ss.145-148, 2011 (SCI-Expanded, Scopus)

2011

26. Temperature dependent current-voltage and capacitance-voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

Demircioglu O., Karatas S., Yildirim N., Bakkaloglu O. F., Turut A.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.509, sa.22, ss.6433-6439, 2011 (SCI-Expanded, Scopus)

2011

27. Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts

Ejderha K., Zengin A., Orak I., Tasyurek B., Kilinc T., Turut A.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.14, sa.1, ss.5-12, 2011 (SCI-Expanded, Scopus)

2011

28. Electrical and optical characteristics of Au/PbS/n-6H-SiC structures prepared by electrodeposition of PbS thin film on n-type 6H-SiC substrate

GULEN Y., ALANYALIOĞLU M., Ejderha K., NUHOGLU C., TURUT A.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.509, sa.6, ss.3155-3159, 2011 (SCI-Expanded, Scopus)

2011

29. Capacitance and conductance-frequency characteristics of Au-Sb/p-GaSe:Gd Schottky barrier diode

Duman S., Gurbulak B., Dogan S., Turut A.

Vacuum , cilt.85, sa.8, ss.798-801, 2011 (SCI-Expanded, Scopus)

2011

30. Schottky barrier height modification in Au/n-type 6H-SiC structures by PbS interfacial layer

Gulen Y., Ejderha K., Nuhoglu C., Turut A.

MICROELECTRONIC ENGINEERING , cilt.88, sa.2, ss.179-182, 2011 (SCI-Expanded, Scopus)

2011

31. Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Gullu O., Turut A.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.509, sa.3, ss.571-577, 2011 (SCI-Expanded, Scopus)

2010

32. Electrical analysis of organic dye-based MIS Schottky contacts

Gullu O., Turut A.

MICROELECTRONIC ENGINEERING , cilt.87, sa.12, ss.2482-2487, 2010 (SCI-Expanded, Scopus)

2010

33. On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts

YILDIRIM N., EJDERHA K., TÜRÜT A.

JOURNAL OF APPLIED PHYSICS , cilt.108, sa.11, 2010 (SCI-Expanded, Scopus)

2010

34. Extraction of electronic parameters of Schottky diode based on an organic Orcein

AYDOĞAN Ş., İNCEKARA Ü., DENIZ A. R., Turut A.

MICROELECTRONIC ENGINEERING , cilt.87, sa.12, ss.2525-2530, 2010 (SCI-Expanded, Scopus)

2010

35. Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts

Goksu T., Yildirim N., Korkut H., Ozdemir A. F., Turut A., Kokce A.

MICROELECTRONIC ENGINEERING , cilt.87, sa.9, ss.1781-1784, 2010 (SCI-Expanded, Scopus)

2010

36. The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts

YILDIRIM N., TÜRÜT A., Turut V.

MICROELECTRONIC ENGINEERING , cilt.87, sa.11, ss.2225-2229, 2010 (SCI-Expanded, Scopus)

2010

37. Determination of contact parameters of Au/Carmine/n-Si Schottky device

AYDOĞAN Ş., İNCEKARA Ü., Turut A.

THIN SOLID FILMS , cilt.518, sa.23, ss.7156-7160, 2010 (SCI-Expanded, Scopus)

2010

38. Extraction of electronic parameters of Schottky diode based on an organic Indigotindisulfonate Sodium (IS)

AYDOĞAN Ş., Incekara U., DENIZ A. R., Turut A.

SOLID STATE COMMUNICATIONS , cilt.150, ss.1592-1596, 2010 (SCI-Expanded, Scopus)

2010

39. Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Vural O., Safak Y., Altindal S., Turut A.

CURRENT APPLIED PHYSICS , cilt.10, sa.3, ss.761-765, 2010 (SCI-Expanded, Scopus)

2010

40. n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties

Gullu O., Turut A.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , cilt.28, sa.3, ss.466-472, 2010 (SCI-Expanded, Scopus)

2010

41. Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices

Gullu O., Asubay S., Biber M., Kilicoglu T., Turut A.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.50, sa.1, 2010 (SCI-Expanded, Scopus)

2010

42. Electrical characterization of the Al/new fuchsin/n-Si organic-modified device

Gullu O., Asubay S., AYDOĞAN Ş., TURUT A.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.42, sa.5, ss.1411-1416, 2010 (SCI-Expanded, Scopus)

2010

43. Electronic properties of the metal/organic interlayer/inorganic semiconductor sandwich device

Gullu O., Kilicoglu T., Turut A.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , cilt.71, sa.3, ss.351-356, 2010 (SCI-Expanded, Scopus)

2010

44. The frequency-dependent electrical characteristics of interfaces in the Sn/p-Si metal semiconductor structures

Karatas S., Turut A.

MICROELECTRONICS RELIABILITY , cilt.50, sa.3, ss.351-355, 2010 (SCI-Expanded, Scopus)

2010

45. Influence of interface states on the temperature dependence and current-voltage characteristics of Ni/p-InP Schottky diodes

Ejderha K., Yildirim N., Turut A., ABAY B.

SUPERLATTICES AND MICROSTRUCTURES , cilt.47, sa.2, ss.241-252, 2010 (SCI-Expanded, Scopus)

2009

46. Thermal annealing effects on I-V-T characteristics of sputtered Cr/n-GaAs diodes

Korkut H., Yildirim N., Turut A.

PHYSICA B-CONDENSED MATTER , cilt.404, sa.21, ss.4039-4044, 2009 (SCI-Expanded, Scopus)

2009

47. Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures

Gullu O., Turut A.

JOURNAL OF APPLIED PHYSICS , cilt.106, sa.10, 2009 (SCI-Expanded, Scopus)

2009

48. A theoretical analysis together with experimental data of inhomogeneous Schottky barrier diodes

YILDIRIM N., TÜRÜT A.

MICROELECTRONIC ENGINEERING , cilt.86, sa.11, ss.2270-2274, 2009 (SCI-Expanded, Scopus)

2009

49. DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE

Yildirim N., Dogan H., Korkut H., Turut A.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.23, sa.27, ss.5237-5249, 2009 (SCI-Expanded, Scopus)

2009

50. Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes

Cinar K., Yildirim N., COŞKUN C., Turut A.

JOURNAL OF APPLIED PHYSICS , cilt.106, sa.7, 2009 (SCI-Expanded, Scopus)

2009

51. Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I-V characteristics in Co/p-InP contacts

Ejderha K., Yildirim N., ABAY B., Turut A.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.484, ss.870-876, 2009 (SCI-Expanded, Scopus)

2009

52. Electrical Properties of Organic-Inorganic Semiconductor Device Based on Rhodamine-101

Cakar M., Gullu O., Yildirim N., Turut A.

JOURNAL OF ELECTRONIC MATERIALS , cilt.38, sa.9, ss.1995-1999, 2009 (SCI-Expanded, Scopus)

2009

53. Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes

Asubay S., Gullu O., Turut A.

VACUUM , cilt.83, sa.12, ss.1470-1474, 2009 (SCI-Expanded, Scopus)

2009

54. Series resistance determination of Au/Polypyrrole/p-Si/Al structure by current-voltage measurements at low temperatures

AYDOĞAN Ş., SAĞLAM M., TURUT A., ONGANER Y.

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS , cilt.29, sa.4, ss.1486-1490, 2009 (SCI-Expanded, Scopus)

2009

55. Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

Cimilli F. E., SAĞLAM M., EFEOĞLU H., Turut A.

PHYSICA B-CONDENSED MATTER , cilt.404, ss.1558-1562, 2009 (SCI-Expanded, Scopus)

2009

56. Fabrication and electrical characterization of a silicon Schottky device based on organic material

AYDOĞAN Ş., GULLU O., TURUT A.

PHYSICA SCRIPTA , cilt.79, sa.3, 2009 (SCI-Expanded, Scopus)

2009

57. Analysis of current-voltage-temperature characteristics and T-0 anomaly in Cr/n-GaAs Schottky diodes fabricated by magnetron sputtering technique

Korkut H., Yildirim N., Turut A., Dogan H.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , cilt.157, ss.48-52, 2009 (SCI-Expanded, Scopus)

2009

58. Temperature-dependent Schottky barrier inhomogeneity of Ni/n-GaAs diodes

Yildirim N., Korkut H., Turut A.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.45, sa.1, 2009 (SCI-Expanded, Scopus)

2009

59. Electrical characteristics and inhomogeneous barrier analysis of Au-Be/p-InSe:Cd Schottky barrier diodes

Duman S., Gurbulak B., Dogan S., Turut A.

Microelectronic Engineering , cilt.86, sa.1, ss.106-110, 2009 (SCI-Expanded, Scopus)

2009

60. Temperature-dependent current-voltage characteristics of Cr/n-GaAs Schottky diodes

Korkut H., Yildirim N., Turut A.

MICROELECTRONIC ENGINEERING , cilt.86, sa.1, ss.111-116, 2009 (SCI-Expanded, Scopus)

2008

61. Effect of 6 MeV electron irradiation on electrical characteristics of the Au/n-Si/Al Schottky diode

Ugurel E., Aydoğan Ş., Şerifoğlu K., Turut A.

MICROELECTRONIC ENGINEERING , cilt.85, ss.2299-2303, 2008 (SCI-Expanded, Scopus)

2008

62. DNA-based organic-on-inorganic devices: Barrier enhancement and temperature issues

GULLU O., CANKAYA M., BARIŞ Ö., TURUT A.

MICROELECTRONIC ENGINEERING , cilt.85, sa.11, ss.2250-2255, 2008 (SCI-Expanded, Scopus)

2008

63. Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au/n-GaAs metal-semiconductor Schottky contacts

Gullu O., Biber M., Van Meirhaeghe R. L., Turut A.

THIN SOLID FILMS , cilt.516, sa.21, ss.7851-7856, 2008 (SCI-Expanded, Scopus)

2008

64. Electron irradiation effects on the organic-on-inorganic silicon Schottky structure

Gullu O., Aydoğan Ş., Şerifoğlu K., Turut A.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , cilt.593, ss.544-549, 2008 (SCI-Expanded, Scopus)

2008

65. Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures

Gullu O., Cankaya M., Biber M., Turut A.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.41, sa.13, 2008 (SCI-Expanded, Scopus)

2008

66. DNA-based organic-on-inorganic semiconductor Schottky structures

GULLU O., CANKAYA M., BARIŞ Ö., BIBER M., ÖZDEMİR H., GÜLLÜCE M., et al.

APPLIED SURFACE SCIENCE , cilt.254, sa.16, ss.5175-5180, 2008 (SCI-Expanded, Scopus)

2008

67. DNA-modified indium phosphide Schottky device

GULLU O., CANKAYA M., BARIŞ Ö., Turut A.

APPLIED PHYSICS LETTERS , cilt.92, sa.21, 2008 (SCI-Expanded, Scopus)

2008

68. Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes

Dogan H., Yildirim N., Turut A.

MICROELECTRONIC ENGINEERING , cilt.85, sa.4, ss.655-658, 2008 (SCI-Expanded, Scopus)

2008

69. Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes

Asubay S., Gullu O., Turut A.

APPLIED SURFACE SCIENCE , cilt.254, sa.11, ss.3558-3561, 2008 (SCI-Expanded, Scopus)

2008

70. Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

GULLU O., BARIŞ Ö., BIBER M., TURUT A.

APPLIED SURFACE SCIENCE , cilt.254, sa.10, ss.3039-3044, 2008 (SCI-Expanded, Scopus)

2008

71. Temperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodes

Asubay S., GÜLLÜ O., ABAY B., Turut A., Yilmaz A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.23, sa.3, 2008 (SCI-Expanded, Scopus)

2007

72. The electrical characteristics of sn/methyl-red/p-type Si/Al contacts

Aydin M. E., Turut A.

MICROELECTRONIC ENGINEERING , cilt.84, sa.12, ss.2875-2882, 2007 (SCI-Expanded, Scopus)

2007

73. Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

Dogan H., Korkut H., Yildirim N., Turut A.

APPLIED SURFACE SCIENCE , cilt.253, sa.18, ss.7467-7470, 2007 (SCI-Expanded, Scopus)

2007

74. Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I-V-T and C-V-T measurements

Karatas S., Altindal S., Turut A., Cakar M.

PHYSICA B-CONDENSED MATTER , cilt.392, ss.43-50, 2007 (SCI-Expanded, Scopus)

2007

75. Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(:Sn)

Duman S., Gurbulak B., Turut A.

Applied Surface Science , cilt.253, sa.8, ss.3899-3905, 2007 (SCI-Expanded, Scopus)

2007

76. The conductance and capacitance-frequency characteristics of Au/pyronine-B/ptype Si/Al contacts

Cakar M., Yildirim N., Dogan H., Turut A.

APPLIED SURFACE SCIENCE , cilt.253, sa.7, ss.3464-3468, 2007 (SCI-Expanded, Scopus)

2006

77. Electrical properties of Sn/p-Si (MS) Schottky barrier diodes to be exposed to (CO)-C-60 gamma-ray source

Karatas S., Turut A.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , cilt.566, sa.2, ss.584-589, 2006 (SCI-Expanded, Scopus)

2006

78. Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101/n-Si and Sn/rhodamine-101/p-Si Schottky barrier diodes

Cakar M., Yildirim N., Karatas S., Temirci C., Turut A.

JOURNAL OF APPLIED PHYSICS , cilt.100, sa.7, 2006 (SCI-Expanded, Scopus)

2006

79. Electrical properties of polypyrrole/p-InP structure

Aydogan S., Saglam M., TURUT A.

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS , cilt.44, sa.11, ss.1572-1579, 2006 (SCI-Expanded, Scopus)

2006

80. Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model

Dogan H., Yildirim N., Turut A., Biber M., Ayyildiz E., Nuhoglu C.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.21, sa.6, ss.822-828, 2006 (SCI-Expanded, Scopus)

2006

81. The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes

Karatas S., Turut A.

PHYSICA B-CONDENSED MATTER , cilt.381, ss.199-203, 2006 (SCI-Expanded, Scopus)

2006

82. The temperature dependence of current-voltage characteristics of the Au/Polypyrrole/p-Si/Al heterojunctions

Aydogan S., Saglam M., TURUT A.

JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.18, sa.9, ss.2665-2676, 2006 (SCI-Expanded, Scopus)

2006

83. The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I-V-T characteristics

Ozdemir A., Turut A., Kokce A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.21, sa.3, ss.298-302, 2006 (SCI-Expanded, Scopus)

2006

84. Temperature dependence of the current-voltage characteristics of the Al/Rhodamine-101/p-Si(100) contacts

Karatas S., Temirci C., Cakar M., Turut A.

APPLIED SURFACE SCIENCE , cilt.252, sa.6, ss.2209-2216, 2006 (SCI-Expanded, Scopus)

2006

85. The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes

Biber M., Gullu O., Forment S., Van Meirhaeghe R., Turut A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.21, sa.1, ss.1-5, 2006 (SCI-Expanded, Scopus)

2005

86. Effects of Co-60 gamma-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

Karatas S., Turut A., Altindal S.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT , cilt.555, ss.260-265, 2005 (SCI-Expanded, Scopus)

2005

87. On the some electrical properties of the non-ideal PPy/p-Si/Al structure

Aydogan S., Saglam M., TURUT A.

POLYMER , cilt.46, sa.24, ss.10982-10988, 2005 (SCI-Expanded, Scopus)

2005

88. Barrier height enhancement and stability of the Au/n-InP Schottky barrier diodes oxidized by absorbed water vapor

Cetin H., Ayyildiz E., Turut A.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , cilt.23, sa.6, ss.2436-2443, 2005 (SCI-Expanded, Scopus)

2005

89. The dependence of I-V and C-V characteristics on temperature in the H-terminated Pb/p-Si(100) Schottky barrier diodes

Nuhoglu C., Ozerden E., Turut A.

APPLIED SURFACE SCIENCE , cilt.250, ss.203-208, 2005 (SCI-Expanded, Scopus)

2005

90. On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

Aydogan S., Saglam M., TURUT A.

APPLIED SURFACE SCIENCE , cilt.250, ss.43-49, 2005 (SCI-Expanded, Scopus)

2005

91. Current-voltage-temperature analysis of inhomogeneous Au/n-GaAs Schottky contacts

Biber M., Coskun C., Turut A.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.31, sa.2, ss.79-86, 2005 (SCI-Expanded, Scopus)

2005

92. Characterization of capacitance-frequency features of Sn/polypyrrole/n-Si structure as a function of temperature

Aydogan S., Saglam M., TURUT A.

POLYMER , cilt.46, sa.16, ss.6148-6153, 2005 (SCI-Expanded, Scopus)

2005

93. Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation

Cetin H., Sahin B., Ayyildiz E., Turut A.

PHYSICA B-CONDENSED MATTER , cilt.364, ss.133-141, 2005 (SCI-Expanded, Scopus)

2005

94. The effects of the temperature on current-voltage characteristics of Sn/polypyrrole/n-Si structures

Aydogan S., Saglam M., TURUT A., Onganer Y.

SYNTHETIC METALS , cilt.150, sa.1, ss.15-20, 2005 (SCI-Expanded, Scopus)

2005

95. Current-voltage and capacitance-voltage characteristics of polypyrrole/p-InP structure

Aydogan S., Saglam M., TURUT A.

VACUUM , cilt.77, sa.3, ss.269-274, 2005 (SCI-Expanded, Scopus)

2005

96. The effects of the temperature on the some parameters obtained from current-voltage and capacitance-voltage characteristics of polypyrrole/n-Si structure

Aydogan S., Saglam M., TURUT A.

POLYMER , cilt.46, sa.2, ss.563-568, 2005 (SCI-Expanded, Scopus)

2004

97. Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au/n-GaAs and Ti/n-GaAs diodes

Forment S., Biber M., Van Meirhaeghe R., Leroy W., Turut A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.19, sa.12, ss.1391-1396, 2004 (SCI-Expanded, Scopus)

2004

98. The effect of series resistance on the relationship between barrier heights and ideality factors of inhomogeneous Schottky barrier diodes

Akkilic K., Aydin M., Turut A.

PHYSICA SCRIPTA , cilt.70, sa.6, ss.364-367, 2004 (SCI-Expanded, Scopus)

2004

99. Low- and high-frequency C-V characteristics of the contacts formed by sublimation of the nonpolymeric organic compound on p-type Si substrate

TEMIRCI C., CAKAR M., TURUT A., Onganer Y.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.201, sa.14, ss.3077-3086, 2004 (SCI-Expanded, Scopus)

2004

100. The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes

Cetin H., Sahin B., Ayyildiz E., Turut A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.19, sa.9, ss.1113-1116, 2004 (SCI-Expanded, Scopus)

2004

101. The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy

Karatas S., Turut A.

VACUUM , cilt.74, sa.1, ss.45-53, 2004 (SCI-Expanded, Scopus)

2004

102. The Schottky barrier height of the rectifying Cu/pyronline-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contacts

Cakar M., Temirci C., Turut A.

SYNTHETIC METALS , cilt.142, ss.177-180, 2004 (SCI-Expanded, Scopus)

2004

103. Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

CAKAR M., TURUT A., Onganer Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.15, sa.1, ss.47-53, 2004 (SCI-Expanded, Scopus)

2003

104. Linear correlation between barrier heights and ideality factors of Sn/n-Si schottky diodes with and without the interfacial native oxide layer

Akkilic K., Kilicoglu T., Turut A.

PHYSICA B-CONDENSED MATTER , cilt.337, ss.388-393, 2003 (SCI-Expanded, Scopus)

2003

105. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(100) Schottky contacts

Karatas S., Altindal S., Turut A., Ozmen A.

APPLIED SURFACE SCIENCE , cilt.217, ss.250-260, 2003 (SCI-Expanded, Scopus)

2003

106. The conductance and capacitance-frequency characteristics of the organic compound (pyronine-B)/p-Si structures

Cakar M., Turut A.

SYNTHETIC METALS , cilt.138, sa.3, ss.549-554, 2003 (SCI-Expanded, Scopus)

2003

107. The barrier height inhomogeneity in identically prepared Pb/p-type Si Schottky barrier diodes

NUHOGLU C., Aydogan S., TURUT A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.18, sa.7, ss.642-646, 2003 (SCI-Expanded, Scopus)

2003

108. Effect of hydrostatic pressure on characteristics parameters of Sn/p-Si Schottky diodes

Cakar M., Temirci C., Turut A., Cankaya G.

PHYSICA SCRIPTA , cilt.68, sa.1, ss.70-73, 2003 (SCI-Expanded, Scopus)

2003

109. Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes

Akkilic K., Turut A., Cankaya G., Kilicoglu T.

SOLID STATE COMMUNICATIONS , cilt.125, sa.10, ss.551-556, 2003 (SCI-Expanded, Scopus)

2003

110. The energy distribution of the interface state density of Pb/p-Si Schottky contacts exposed to clean room air

Cetinkara H., Turut A., Zengin D., Erel S.

APPLIED SURFACE SCIENCE , cilt.207, ss.190-199, 2003 (SCI-Expanded, Scopus)

2003

111. The interface state energy distribution from capacitance-frequency characteristics of gold/n-type Gallium arsenide Schottky barrier diodes exposed to air

Ozdemir A., Turut A., Kokce A.

THIN SOLID FILMS , cilt.425, ss.210-215, 2003 (SCI-Expanded, Scopus)

2002

112. The Cu/n-GaAs Schottky barrier diodes prepared by anodization process

Biber M., Turut A.

JOURNAL OF ELECTRONIC MATERIALS , cilt.31, sa.12, ss.1362-1368, 2002 (SCI-Expanded, Scopus)

2002

113. The conductance- and capacitance-frequency characteristics of the rectifying junctions formed by sublimation of organic pyronine-B on p-type silicon

CAKAR M., TURUT A., Onganer Y.

JOURNAL OF SOLID STATE CHEMISTRY , cilt.168, sa.1, ss.169-174, 2002 (SCI-Expanded, Scopus)

2002

114. Determination of the density distribution of interface states from high- and low-frequency capacitance characteristics of the tin/organic pyronine-B/p-type silicon structure

Cakar M., Temirci C., Turut A.

CHEMPHYSCHEM , cilt.3, sa.8, ss.701-705, 2002 (SCI-Expanded, Scopus)

2002

115. The effects of the time-dependent and exposure time to air on Au/n-GaAs schottky barrier diodes

Ozdemir A., Kokce A., Turut A.

APPLIED SURFACE SCIENCE , cilt.191, ss.188-195, 2002 (SCI-Expanded, Scopus)

2002

116. The nonpolymeric organic compound (pyronine-B)/p-type silicon/Sn contact barrier devices

CAKAR M., Onganer Y., TURUT A.

SYNTHETIC METALS , cilt.126, ss.213-218, 2002 (SCI-Expanded, Scopus)

2002

117. The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/N-Si Schottky barrier diodes

Ayyildiz E., Lu C., Turut A.

JOURNAL OF ELECTRONIC MATERIALS , cilt.31, sa.2, ss.119-123, 2002 (SCI-Expanded, Scopus)

2002

118. Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process

Biber M., Temirci C., Turut A.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , cilt.20, sa.1, ss.10-13, 2002 (SCI-Expanded, Scopus)

2002

119. Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs

Gumus A., Turut A., Yalcin N.

JOURNAL OF APPLIED PHYSICS , cilt.91, sa.1, ss.245-250, 2002 (SCI-Expanded, Scopus)

2001

120. The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes

Biber M., Cakar M., Turut A.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.12, sa.10, ss.575-579, 2001 (SCI-Expanded, Scopus)

2001

121. The effect of series resistance on calculation of the interface state density distribution in Schottky diodes

Ayyildiz E., Temirci C., Bati B., Turut A.

INTERNATIONAL JOURNAL OF ELECTRONICS , cilt.88, sa.6, ss.625-633, 2001 (SCI-Expanded, Scopus)

2000

122. Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure

Cankaya G., Ucar N., Turut A.

INTERNATIONAL JOURNAL OF ELECTRONICS , cilt.87, sa.10, ss.1171-1176, 2000 (SCI-Expanded, Scopus)

2000

123. An investigation of I-V characteristics of Au/n-GaAs Schottky diodes after hydrostatic pressure

Cankaya G., Ucar N., Turut A.

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , cilt.179, sa.2, ss.469-473, 2000 (SCI-Expanded, Scopus)

2000

124. Current-voltage and capacitance-voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts

ABAY B., ONGANER Y., SAĞLAM M., EFEOĞLU H., Türüt A., Yoǧurtçu Y.

Microelectronic Engineering , cilt.51, ss.689-693, 2000 (SCI-Expanded, Scopus)

2000

125. Effect of thermal annealing on Co/n-LEC GaAs (Te) Schottky contacts

Nuhoglu C., Temirci C., Bati B., Biber M., Turut A.

SOLID STATE COMMUNICATIONS , cilt.115, sa.6, ss.291-295, 2000 (SCI-Expanded, Scopus)

1999

126. Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes

ÇANKAYA G., UÇAR N., Ayyildiz E., Efeoglu H., Turut A., Tuzemen S., et al.

PHYSICAL REVIEW B , cilt.60, sa.23, ss.15944-15947, 1999 (SCI-Expanded, Scopus)

1999

127. Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes

Ayyildiz E., Bati B., Temirci C., Turut A.

APPLIED SURFACE SCIENCE , cilt.152, ss.57-62, 1999 (SCI-Expanded, Scopus)

1999

128. Thermal stability of NiTi alloy contacts on n-type liquid encapsulated Czochralski GaAs

Ayyildiz E., Türüt A., TÜZEMEN S.

Solid State Communications , cilt.110, sa.8, ss.419-423, 1999 (SCI-Expanded, Scopus)

1999

129. The effects of the time-dependent and exposure time to air on Au epilayer n-Si Schottky diodes

Cetinkara H., Saglam M., Turut A., Yalcin N.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.6, sa.1, ss.89-94, 1999 (SCI-Expanded, Scopus)

1999

130. The effect of thermal treatment on the characteristic parameters of Ni/-, Ti/- and NiTi alloy n-GaAs Schottky diodes

Ayyildiz E., Turut A.

SOLID-STATE ELECTRONICS , cilt.43, sa.3, ss.521-527, 1999 (SCI-Expanded, Scopus)

1998

131. Thermal stability of Cr-Ni-Co alloy Schottky contacts on MBE n-GaAs

Turut A., GÜMÜŞ A., Saglam M., Tuzemen S., Efeoglu H., YALÇIN N., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.13, sa.7, ss.776-780, 1998 (SCI-Expanded, Scopus)

1996

132. Series resistance calculation for the metal-insulator-semiconductor Schottky barrier diodes

Saglam M., Ayyıldız E., GÜMÜŞ A., Turut A., Efeoglu H., Tuzemen S.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.62, sa.3, ss.269-273, 1996 (SCI-Expanded, Scopus)

1996

133. High barrier metallic polymer/p-type silicon Schottky diodes

ONGANER Y., SAĞLAM M., Türüt A., EFEOĞLU H., TÜZEMEN S.

Solid-State Electronics , cilt.39, sa.5, ss.677-680, 1996 (SCI-Expanded, Scopus)

1996

134. Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

Ayyildiz E., Türüt A., EFEOĞLU H., TÜZEMEN S., SAĞLAM M., Yoǧurtçu Y. K.

Solid-State Electronics , cilt.39, sa.1, ss.83-87, 1996 (SCI-Expanded, Scopus)

1993

135. METALLIC POLYTHIOPHENE INORGANIC SEMICONDUCTOR SCHOTTKY DIODES

TURUT A., KOLELI F.

PHYSICA B , cilt.192, sa.3, ss.279-283, 1993 (SCI-Expanded, Scopus)

1992

136. DETERMINATION OF THE DENSITY OF SI-METAL INTERFACE STATES AND EXCESS CAPACITANCE CAUSED BY THEM

TURUT A., SAGLAM M.

PHYSICA B , cilt.179, sa.4, ss.285-294, 1992 (SCI-Expanded, Scopus)

1992

137. PARAMETER EXTRACTION FROM NONIDEAL C-V CHARACTERISTICS OF A SCHOTTKY DIODE WITH AND WITHOUT INTERFACIAL LAYER

TURUT A., YALCIN N., SAGLAM M.

SOLID-STATE ELECTRONICS , cilt.35, sa.6, ss.835-841, 1992 (SCI-Expanded, Scopus)

1992