Prof. Betül GÜZELDİR

Publication Network

Articles 46

1. Study of how illumination affects the electrical properties of Al/n-gap Schottky diodes with varying amounts of Cu NCs-doped wm-cqd interlayer

Enis O., NADAROĞLU H., GÜZELDİR B., SAĞLAM M.

Physica B: Condensed Matter , vol.717, 2025 (SCI-Expanded)

2. Statistical analysis of characteristic parameters of graphene/p-Si junctions prepared under similar conditions

ÖZAKIN O., SAĞLAM M., GÜZELDİR B.

Physica B: Condensed Matter , vol.677, 2024 (SCI-Expanded)

3. Mixed halide perovskite compound thin film with large cation Guanidinium and applications: MIS (Au/GUAPbI3-xClx/p-Si/Al) and p-FET (Al/p-Si/SiO2/GUAPbI3- xClx/Al)

Baltakesmez A., Güzeldir B.

Surfaces and Interfaces , vol.40, no.103066, pp.1-12, 2023 (SCI-Expanded)

4. Undoped p-type ZnTe thin film and thin film transistor channel performance

Baltakesmez A., Güzeldir B.

APPLIED PHYSICS A: MATERIALS SCIENCE AND PROCESSING , vol.129, no.134, pp.1-12, 2023 (SCI-Expanded)

5. Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer

Güzeldir B., Baltakesmez A., Sağlam M.

PHYSICA B: CONDENSED MATTER , no.647, pp.414364, 2022 (SCI-Expanded)

6. Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature

Özakın O., Sağlam M., Güzeldir B.

JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.33, pp.14627-14643, 2022 (SCI-Expanded)

7. Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature

SAĞLAM M., GÜZELDİR B., TÜRÜT A., EKİNCİ D.

JOURNAL OF ELECTRONIC MATERIALS , vol.50, pp.4752-4761, 2021 (SCI-Expanded)

8. Interface application of NiPt alloy nanoparticles decorated rGO nanocomposite to eliminate of contact problem between metal and inorganic/organic semiconductor

Baltakesmez A., SEVİM M., GÜZELDİR B., Aykaç C., Biber M.

Journal of Alloys and Compounds , vol.867, 2021 (SCI-Expanded)

9. Interpretation of the I–V, C–V and G/ω-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature

Baltakesmez A., GÜZELDİR B., SAĞLAM M., Biber M.

Physica B: Condensed Matter , vol.611, 2021 (SCI-Expanded)

10. Temperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique

Baltakesmez A., Tekmen S., GÜZELDİR B.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.118, 2020 (SCI-Expanded)

11. Effects of surface passivation on capacitance-voltage and conductance-voltage characteristics of Al/p-type Si/Al and Al/V2O5/p-type Si/Al diodes

Şenarslan E., Güzeldir B., Sağlam M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , vol.146, 2020 (SCI-Expanded)

12. Investigation of electrical and admittance analysis of Au/Thiophene/n-Si structure at room temperature

Baltakesmez A., Bilkan Ç., Güzeldir B.

PHYSICA B-CONDENSED MATTER , vol.594, 2020 (SCI-Expanded)

13. Optimizing quality of lead-free perovskite thin film with anti-solvent engineering and co-doping SnBr2/SnF2; its solar cell performance

Baltakesmez A., Güzeldir B., Alkan Y., Sağlam M., Biber M.

OPTICAL MATERIALS , vol.110, no.110524, pp.1-12, 2020 (SCI-Expanded)

14. A comparative study on theoretical and experimental methods using basic electrical parameters of Au/CNTs/lnP/Au-Ge diodes

Saraç Y., Sener S. Ş., Baltakesmez A., Güzeldir B., Sağlam M.

JOURNAL OF ALLOYS AND COMPOUNDS , vol.824, 2020 (SCI-Expanded)

15. Albedo parameters of selenium and boron compounds doped V2O5 thin films

YILMAZ D., Uzunoğlu Z., Baltakesmez A., Ozcelik F. S., GÜZELDİR B.

RADIATION PHYSICS AND CHEMISTRY , vol.166, 2020 (SCI-Expanded)

16. The protection from the effects of gamma rays of metal-semiconductor diodes by means of ZnO thin interface layer

Salari M. A., SAĞLAM M., Güzeldir B.

RADIATION PHYSICS AND CHEMISTRY , vol.165, 2019 (SCI-Expanded)

17. Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature

ÖZAKIN O., Bayram Ö., AYKAÇ C., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific & Engineering Research , vol.10, no.9, pp.46-48, 2019 (Peer-Reviewed Journal)

18. Electrical Characteristic of Au/Graphene/pp-Si/AlSchottky Diode Depend on AnnealingTemperature

ÖZAKIN O., BAYRAM Ö., Aykaç C., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research , vol.10, no.9, pp.46-48, 2019 (Peer-Reviewed Journal)

19. The electrical current characteristics of thermally annealed Co/anodic oxide layer/n-GaAs sandwich structures

Yildirm N., TÜRÜT A., Biber M., SAĞLAM M., GÜZELDİR B.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , vol.33, no.21, 2019 (SCI-Expanded)

20. Phase transition and changing properties of nanostructured V2O5 thin films deposited by spray pyrolysis technique, as a function of tungsten dopant

Baltakesmez A., AYKAÇ C., GÜZELDİR B.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.125, no.6, 2019 (SCI-Expanded)

21. Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range

Baltakesmez A., TAŞER A., KUDAŞ Z., GÜZELDİR B., EKİNCİ D., SAĞLAM M.

JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.5, pp.3169-3182, 2019 (SCI-Expanded)

22. Effect of electron radiation on electrical parameters of Zn/n-Si/Au-Sb and Zn/ZnO/n-Si/Au-Sb diodes

Salari M. A., SAĞLAM M., Baltakesmez A., GÜZELDİR B.

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY , vol.319, no.3, pp.667-678, 2019 (SCI-Expanded)

23. Effect of x-rays and ɣ radiation on the optical and structural properties of vanadium oxide thin film

BALTAKESMEZ A., YILMAZ D., GÜZELDİR B., İskenderoğlu D., SAĞLAM M.

International Journal of Scientific Engineering Research , vol.9, pp.23-29, 2018 (Peer-Reviewed Journal)

24. A Study of Graphene Obtained by PECVD Technique Depending on RF Power

ÖZAKIN O., AYKAÇ C., ODABAŞ M., TAŞER A., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research , vol.9, pp.38-41, 2018 (Peer-Reviewed Journal)

25. The Effects of Gamma Radiation On Structural and Surface Properties of ZnO Thin Films Deposited On n-Si Substrate

SALARİ M. A., ODABAŞ M., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research, , vol.9, pp.30-37, 2018 (Peer-Reviewed Journal)

26. X- and gamma-ray irradiation effects on vanadium pentoxide thin films

YILMAZ D., GÜZELDİR B., AKKUŞ T., ÖZNÜLÜER T.

SPECTROSCOPY LETTERS , vol.51, no.6, pp.297-301, 2018 (SCI-Expanded) Sustainable Development

27. Nanostructures and Properties of Vanadium Oxide Thin Film Preparedby Spray Pyrolysis Method

Şenarslan E., Güzeldir B., Sağlam M.

Materials Science Forum , vol.890, pp.287-290, 2017 (Scopus)

28. The stability of electrical characteristics of Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/nSi/AgCu diodes prepared under the same conditions with respect to increasing aging time

Taşer A., GÜZELDİR B., SAĞLAM M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.68, pp.186-192, 2017 (SCI-Expanded)

29. The Stability of Electrical Characteristics of Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/n-Si/AgCu Diodes Prepared Under the Same Conditions With Respect to Increasing Aging Time

TAŞER A., GÜZELDİR B., SAĞLAM M.

MATERİALS SCİENCE IN SEMİCONDUCTOR PROCESSİNG , vol.68, pp.186-192, 2017 (SCI-Expanded)

30. Analysis of Aging Time Dependent ElectricalCharacteristics of AuCu/n-Si/Ti Schottky Type Diode

TAŞER A., ŞENARSLAN E., GÜZELDİR B., SAĞLAM M.

AIP Conference Proceedings , no.1833, pp.20080, 2017 (Scopus)

31. Nanorods/Nanostructral Vanadium Oxide Prepared bySpray Pyrolysis

ŞENARSLAN E., TAŞER A., GÜZELDİR B., SAĞLAM M.

AIP Conference Proceedings , no.1833, pp.20089, 2017 (Scopus)

32. Buildup factors and kerma for Al2O3 and SiO2 in the energy range 0.015-15 MeV

YILMAZ D., ALIM B., AKKUŞ T., GÜZELDİR B.

American Institute of Physics , vol.1833, pp.20086, 2017 (SCI-Expanded)

33. Characterization of deposited CdS thin films by Spray Pyrolysis method and used in Cd/CdS/p-Si/Al structure

ÖZAKIN O., Aktaş Ş., GÜZELDİR B., SAĞLAM M.

AIP Conference Proceedings , vol.1833, pp.20092, 2017 (SCI-Expanded)

34. Effects of ageing on the electrical characteristics of Zn ZnS n GaAs In structure

GÜZELDİR B., SAĞLAM M.

Journal of Physics: Conference Series , 2016 (SCI-Expanded)

35. Temperature dependent electrical characteristics of Zn ZnSe n GaAs In structure

SAĞLAM M., GÜZELDİR B.

Journal of Physics: Conference Series , 2016 (SCI-Expanded)

36. Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

Salari M. A., Şenarslan E., Güzeldir B., Sağlam M.

Journal of Physics: Conference Series , vol.707, pp.12018, 2016 (Scopus)

37. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization

GÜZELDİR B., SAĞLAM M.

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY , vol.150, pp.111-119, 2015 (SCI-Expanded) Sustainable Development

38. The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode

ÇAKICI T., SAĞLAM M., GÜZELDİR B.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.28, pp.121-126, 2014 (SCI-Expanded)

39. Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range

BIYIKLI N., Karabulut A., Efeolu H., GÜZELDİR B., TÜRÜT A.

PHYSICA SCRIPTA , vol.89, no.9, 2014 (SCI-Expanded)

40. Some electrical and structural properties of Cd/CdS/n-Si/Au-Sb sandwich structure

GÜZELDİR B., SAĞLAM M., ATEŞ A.

SUPERLATTICES AND MICROSTRUCTURES , vol.52, no.3, pp.416-429, 2012 (SCI-Expanded)

41. Influence of film thickness on structural and optical properties of ZnS thin films obtained by SILAR method and analysis of Zn/ZnS/n-GaAs/In sandwich structure

ÖZAKIN O., GÜZELDİR B., YILDIRIM M. A., SAĞLAM M., ATEŞ A.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.209, no.4, pp.687-693, 2012 (SCI-Expanded)

42. Laterally inhomogeneous barrier analysis of identically prepared Cd/CdS/n-Si/Au-Sb structures by SILAR method

Guzeldir B., Saglam M., Ates A.

MICROELECTRONICS RELIABILITY , vol.51, no.12, pp.2179-2184, 2011 (SCI-Expanded)

43. Effects of ageing on the electrical characteristics of Cd/CdS/n-Si/Au-Sb structure deposited by SILAR method

Guzeldir B., Saglam M., Ates A., Turut A.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , vol.72, no.12, pp.1506-1514, 2011 (SCI-Expanded)

44. Temperature dependent current-voltage characteristics of the Zn/ZnO/n-Si/Au-Sb structure with ZnO interface layer grown on n-Si substrate by SILAR method

YILDIRIM M. A., Guzeldir B., Ates A., Saglam M.

MICROELECTRONIC ENGINEERING , vol.88, no.10, pp.3075-3079, 2011 (SCI-Expanded)

45. ZnS thin film and Zn/ZnS/n-Si/Au-Sb sandwich structure grown with SILAR method and defining the characteristic parameters

Ates A., GÜZELDİR B., SAĞLAM M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.1, pp.28-36, 2011 (SCI-Expanded)

46. Effects of SILAR cycle on the electrical characteristics of Cd/CdSe/n-Si/Au-Sb structure

GÜZELDİR B., SAĞLAM M., Ates A.

TURKISH JOURNAL OF PHYSICS , vol.35, no.1, pp.1-12, 2011 (ESCI)

Papers Presented at Peer-Reviewed Scientific Conferences 97

1. Effect of low molarity HfO2 thin films on the reflectance properties of polished silicon substrate

Kanmaz I., GÜZELDİR B., ÜZÜM A.

1. Uluslararası Palandöken Bilimsel Çalışmalar Kongresi, Erzurum, Turkey, 24 - 25 November 2020, (Summary Text)

2. Graphene oxide assembled Au-based nanocomposite for temperature dependent InP heterojunction devices

Kanmaz İ., BALTAKESMEZ A., Aykaç C., GÜZELDİR B., SAĞLAM M.

Turkish Physical Society 35 th International Physics Congress (TPS35), 4 - 08 September 2019, vol.1, pp.307-3016, (Full Text)

3. Electrical Characteristic of Au/Graphene/p-Si/AlSchottky Diode Depend on Annealing Temperature

ÖZAKIN O., BAYRAM Ö., AYKAÇ C., GÜZELDİR B., SAĞLAM M.

INTERNATIONAL CONFERENCE ONADVANCES INNATURAL APPLIED SCIENCES(ICANAS19), Ağrı, Turkey, 19 - 21 June 2019, (Summary Text)

4. Transferring of Graphene Obtained on Copper Foilby Chemical Vapour Deposition(CVD) Techniqueand Investigation of Its Optical, Structural andCharacteristic Parameters

AYKAÇ C., ÖZAKIN O., BAYRAM Ö., GÜZELDİR B., SAĞLAM M.

INTERNATIONAL CONFERENCE ON ADVANCESIN NATURAL APPLIED SCIENCES(ICANAS19), Ağrı, Turkey, 19 - 21 June 2019, (Summary Text)

5. Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature

ÖZAKIN O., AYKAÇ C., GÜZELDİR B., SAĞLAM M.

4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Turkey, 19 - 22 June 2019, pp.7, (Summary Text)

6. The Annealing Effects Of The Electrical Characteristics In Au-Cu/n-GaAs/In And Ag-Cu/n-GaAs/In Schottky Diodes By Means Of Different Ratios Au-Cu And Ag-Cu Alloys

KANMAZ İ., KÜP S., GÜZELDİR B., SAĞLAM M.

4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Turkey, 19 - 22 June 2019, pp.1, (Summary Text)

7. Examination of some basic electrical properties of Au /p-Si/Al, Au/GO/p-Si/Al and Au/Au-RGO/p-Si/Al structures

ODABAŞ M., TAŞER A., KUDAŞ Z., GÜZELDİR B., SAĞLAM M.

4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Turkey, 19 - 22 June 2019, pp.3, (Summary Text)

8. Different ratios of Au-Ag and Au-Cu alloys for electrical characteristics of Au-Ag/n-GaAs/In and Au-Cu/n-GaAs/In Schottky diodes in the wide temperature range

KÜP S., KANMAZ İ., GÜZELDİR B., SAĞLAM M.

4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Turkey, 19 - 22 June 2019, pp.2, (Summary Text)

9. THE COMPARISON OF CURRENT -VOLTAGE CHARACTERISTICS OF Au/n-Si/Ti, AuAg/n-Si/Ti AND AuCu/n-Si/Ti SCHOTTKY DIODES AT ROOMTEMPERATURE

Orhan Z., YILDIRIM F., TAŞER A., GÜZELDİR B., SAĞLAM M.

MAS INTERNATIONAL CONFERENCEON MATHEMATICS-ENGINEERING-NATURALMEDICAL SCIENCES-V, 2 - 05 May 2019, pp.635-643, (Full Text)

10. EFFECTS OF THERMAL ANNEALING ON DIODE PARAMETERS FROM C-VMEASUREMENTS OF THE Cd/CdS/n-GaAs/In AND Cd/CdSe/n-GaAs/InSTRUCTURES

YILDIRIM F., Orhan Z., GÜZELDİR B., SAĞLAM M.

MAS INTERNATIONAL CONFERENCEON MATHEMATICS-ENGINEERING-NATURALMEDICAL SCIENCES-V, 2 - 05 May 2019, pp.622-634, (Full Text)

11. THE EFFECT OF GO AND AU-RGO INTERFACIAL LAYERS ON AU/p-Si RECTIFYING CONTACT PARAMETERS AT ROOM TEMPERATURE

TAŞER A., SAĞLAM M., GÜZELDİR B., EKİNCİ D.

MAS INTERNATIONAL CONFERENCE ON MATHEMATICS-ENGINEERING-NATURAL&MEDICAL SCIENCES-V, Erzurum, Turkey, 2 - 05 May 2019, pp.311-0, (Full Text)

12. FABRICATION and CHARACTERIZATION of Al/rGO/n-Si/AlHETEROJUNCTION DIODE

Daş E., Orhan Z., Aydoğan Ş., Güzeldir B.

2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Turkey, 28 - 30 August 2018, pp.66-72, (Full Text)

13. TIME DEPENDENT ELECTRICAL PROPERTIES OF Au/n-Si/Ti, AG/n-Si/Ti AND AuAg/n-Si/Ti SCHOTTKY DIODES

TAŞER A., ORHAN Z., AYKAÇ C., ÖZAKIN O., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 August 2018, (Full Text)

14. Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses

SALARİ M. A., ŞAHİN Y., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 August 2018, (Summary Text)

15. CALCULATION OF SOME PARAMETERS OF THE ZnO INTERFACIAL Zn/n-Si JUNCTION DEPENDING ON THE ELECTRON RADIATION APPLIED AT DIFFERENT DOSES THAN THE CAPACITY-VOLTAGE CHARACTERISTICS

SALARİ M. A., MERHAN MUĞLU G., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 August 2018, (Full Text)

16. The temperature dependence of current-voltage characteristics of CuAuAg/n-Si/Ti Schottky diode

ORHAN Z., TAŞER A., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 August 2018, (Summary Text)

17. Effects of Aging on the Electrical Properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky Diodes

TAŞER A., ORHAN Z., AYKAÇ C., ÖZAKIN O., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 August 2018, (Summary Text)

18. EFFECTS OF GOLD WEIGHT RATE ON THE ELECTRICAL CHARACTERISTICS OF CuAuAg/n-Si/Ti SCHOTTKY DIODE

ORHAN Z., TAŞER A., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 August 2018, (Full Text)