Prof. Dr. Mustafa SAĞLAM

Yayın Ağı

Makaleler 104

1. Study of how illumination affects the electrical properties of Al/n-gap Schottky diodes with varying amounts of Cu NCs-doped wm-cqd interlayer

Enis O., NADAROĞLU H., GÜZELDİR B., SAĞLAM M.

Physica B: Condensed Matter , cilt.717, 2025 (SCI-Expanded)

2. Voltage-frequency dependence of the complex dielectric and electric modulus and the determination of the interface-state density distribution from the capacitance-frequency measurements of Al/p-Si/Al and Al/V₂O₅/p-Si/Al structures

ŞENARSLAN E., SAĞLAM M.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.130, sa.9, 2024 (SCI-Expanded)

3. Statistical analysis of characteristic parameters of graphene/p-Si junctions prepared under similar conditions

ÖZAKIN O., SAĞLAM M., GÜZELDİR B.

Physica B: Condensed Matter , cilt.677, 2024 (SCI-Expanded)

4. Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer

Güzeldir B., Baltakesmez A., Sağlam M.

PHYSICA B: CONDENSED MATTER , sa.647, ss.414364, 2022 (SCI-Expanded)

5. Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature

Özakın O., Sağlam M., Güzeldir B.

JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , cilt.33, ss.14627-14643, 2022 (SCI-Expanded)

6. Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature

SAĞLAM M., GÜZELDİR B., TÜRÜT A., EKİNCİ D.

JOURNAL OF ELECTRONIC MATERIALS , cilt.50, ss.4752-4761, 2021 (SCI-Expanded)

7. Interpretation of the I–V, C–V and G/ω-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature

Baltakesmez A., GÜZELDİR B., SAĞLAM M., Biber M.

Physica B: Condensed Matter , cilt.611, 2021 (SCI-Expanded)

8. Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses

Salari M. A., Şahin Y., Güzeldir B., Sağlam M.

Materials Today: Proceedings , cilt.46, sa.16, ss.7001-7004, 2021 (Scopus)

9. Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes

Taşer A., Orhan Z., Aykaç C., Özakın O., Güzeldir B., Sağlam M.

Materials Today: Proceedings , cilt.46, ss.6954-6959, 2021 (Scopus)

10. The temperature dependence of current-voltage characteristics of CuAuAg/n-Si/Ti Schottky diode

Orhan Z., Taşer A., Güzeldir B., Sağlam M.

Materials Today: Proceedings , cilt.46, ss.6924-6928, 2021 (Scopus)

11. Effects of surface passivation on capacitance-voltage and conductance-voltage characteristics of Al/p-type Si/Al and Al/V2O5/p-type Si/Al diodes

Şenarslan E., Güzeldir B., Sağlam M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , cilt.146, 2020 (SCI-Expanded)

12. Optimizing quality of lead-free perovskite thin film with anti-solvent engineering and co-doping SnBr2/SnF2; its solar cell performance

Baltakesmez A., Güzeldir B., Alkan Y., Sağlam M., Biber M.

OPTICAL MATERIALS , cilt.110, sa.110524, ss.1-12, 2020 (SCI-Expanded)

13. A comparative study on theoretical and experimental methods using basic electrical parameters of Au/CNTs/lnP/Au-Ge diodes

Saraç Y., Sener S. Ş., Baltakesmez A., Güzeldir B., Sağlam M.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.824, 2020 (SCI-Expanded)

14. The protection from the effects of gamma rays of metal-semiconductor diodes by means of ZnO thin interface layer

Salari M. A., SAĞLAM M., Güzeldir B.

RADIATION PHYSICS AND CHEMISTRY , cilt.165, 2019 (SCI-Expanded)

15. Effects of Au-Ag and Au-Cu alloy ratios on the temperaturedependent current-voltage characteristics of Au-Ag/n-GaAs/In andAu-Cu/n-GaAs/In Schottky diodes

Küp S., TAŞER A., Kanmaz İ., GÜZELDİR B., SAĞLAM M.

Materials Today: Proceedings , cilt.18, ss.1936-1945, 2019 (Hakemli Dergi)

16. Analysis of thermal annealing effects of Au-Cu/n-GaAs/In andAg-Cu/n- GaAs/In Schottky diodes with different ratios Au-Cu andAg-Cu alloys

Kanmaz İ., TAŞER A., Küp S., GÜZELDİR B., SAĞLAM M.

Materials Today: Proceedings , cilt.18, ss.1918-1926, 2019 (Hakemli Dergi)

17. Time-Based Analysis of t he CharacteristicParameters of AuAgCu(2:1:1)/n n-Si,AuAgCu(1:2:1)/n n-Si and AuAgCu(1:1:2)/n n-SiJunctions

Odabaş M., TAŞER A., Orhan Z., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research , cilt.10, sa.9, ss.42-45, 2019 (Hakemli Dergi)

18. Electrical characteristic of Au/Graphene/p-Si/Al Schottky diode depend on annealing temperature

ÖZAKIN O., Bayram Ö., AYKAÇ C., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific & Engineering Research , cilt.10, sa.9, ss.46-48, 2019 (Hakemli Dergi)

19. Time-based analysis of the characteristic parameters of AuAgCu(2:1:1)/n-Si, AuAgCu(1:2:1)/n-Si and AuAgCu(1:1:2)/n-Si junctions

ODABAŞ M., TAŞER A., ORHAN Z., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific & Engineering Research , cilt.10, sa.9, ss.42-45, 2019 (Hakemli Dergi)

20. Calculation of Electrical Parameters of TheAg/SnO SnO2/n -InP/In Schottky Diode

SALARİ M. A., Odabaş M., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research , cilt.10, sa.9, ss.52-55, 2019 (Hakemli Dergi)

21. Examination of some basic electrical properties of Au/p-Si/Al, Au/GO/p-Si/Al and Au/Au-RGO/p-Si/Al structures

ODABAŞ M., TAŞER A., KUDAŞ Z., Güzeldir B., SAĞLAM M.

International Journal of Scientific & Engineering Research , cilt.10, sa.9, ss.4-7, 2019 (Hakemli Dergi)

22. Electrical Characteristic of Au/Graphene/pp-Si/AlSchottky Diode Depend on AnnealingTemperature

ÖZAKIN O., BAYRAM Ö., Aykaç C., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research , cilt.10, sa.9, ss.46-48, 2019 (Hakemli Dergi)

23. Calculation of electrical parameters of the Ag/SnO2/n-InP/In Schottky Diode

SALARI M. A., ODABAŞ M., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific & Engineering Research , cilt.10, sa.9, ss.52-55, 2019 (Hakemli Dergi)

24. Examination ofSome Basic Electrical Propertiesof Au/p p-Si/Al, Au/GO/p p-Si/Al and Au/Au Au-RGO/p p-Si/Al structures

Odabaş M., TAŞER A., KUDAŞ Z., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research , cilt.10, sa.9, ss.4-7, 2019 (Hakemli Dergi)

25. Transferring of graphene obtained on copper foil by chemical vapour deposition(CVD) technique and investigation of its optical, structural and characteristic parameters

AYKAÇ C., ÖZAKIN O., Bayram Ö., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific & Engineering Research , cilt.10, sa.9, ss.1-3, 2019 (Hakemli Dergi)

26. The electrical current characteristics of thermally annealed Co/anodic oxide layer/n-GaAs sandwich structures

Yildirm N., TÜRÜT A., Biber M., SAĞLAM M., GÜZELDİR B.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B , cilt.33, sa.21, 2019 (SCI-Expanded)

27. Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range

Baltakesmez A., TAŞER A., KUDAŞ Z., GÜZELDİR B., EKİNCİ D., SAĞLAM M.

JOURNAL OF ELECTRONIC MATERIALS , cilt.48, sa.5, ss.3169-3182, 2019 (SCI-Expanded)

28. Effect of electron radiation on electrical parameters of Zn/n-Si/Au-Sb and Zn/ZnO/n-Si/Au-Sb diodes

Salari M. A., SAĞLAM M., Baltakesmez A., GÜZELDİR B.

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY , cilt.319, sa.3, ss.667-678, 2019 (SCI-Expanded)

29. A Study of Graphene Obtained by PECVD Technique Depending on RF Power

ÖZAKIN O., AYKAÇ C., ODABAŞ M., TAŞER A., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research , cilt.9, ss.38-41, 2018 (Hakemli Dergi)

30. Effect of x-rays and ɣ radiation on the optical and structural properties of vanadium oxide thin film

BALTAKESMEZ A., YILMAZ D., GÜZELDİR B., İskenderoğlu D., SAĞLAM M.

International Journal of Scientific Engineering Research , cilt.9, ss.23-29, 2018 (Hakemli Dergi)

31. The Effects of Gamma Radiation On Structural and Surface Properties of ZnO Thin Films Deposited On n-Si Substrate

SALARİ M. A., ODABAŞ M., GÜZELDİR B., SAĞLAM M.

International Journal of Scientific Engineering Research, , cilt.9, ss.30-37, 2018 (Hakemli Dergi)

32. Nanostructures and Properties of Vanadium Oxide Thin Film Preparedby Spray Pyrolysis Method

Şenarslan E., Güzeldir B., Sağlam M.

Materials Science Forum , cilt.890, ss.287-290, 2017 (Scopus)

33. The stability of electrical characteristics of Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/nSi/AgCu diodes prepared under the same conditions with respect to increasing aging time

Taşer A., GÜZELDİR B., SAĞLAM M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.68, ss.186-192, 2017 (SCI-Expanded)

34. Ahmet Taser, Elvan Şenarslan, Betül Güzeldir, and Mustafa Sağlam, Analysis of aging time dependent electrical characteristics of AuCu/n-Si/Ti Schottky type diode

SAĞLAM M.

AIP Conference Proceedings , cilt.1833, ss.20080, 2017 (Hakemli Dergi)

35. Oğuzhan Özakın, Şeydanur Aktaş, Betül Güzeldir, and Mustafa Sağlam, Characterization of deposited CdS thin films by Spray Pyrolysis method and used in Cd/CdS/p-Si/Al structure

SAĞLAM M.

AIP Conference Proceedings , cilt.1833, sa.1833, ss.20092, 2017 (Hakemli Dergi)

36. Elvan Şenarslan, Ahmet Taşer, Betül Güzeldir, and Mustafa Sağlam, Nanorods/nanostructral vanadium oxide prepared by spray pyrolysis

SAĞLAM M.

AIP Conference Proceedings , cilt.1833, sa.1833, ss.20089, 2017 (Hakemli Dergi)

37. Analysis of Aging Time Dependent ElectricalCharacteristics of AuCu/n-Si/Ti Schottky Type Diode

TAŞER A., ŞENARSLAN E., GÜZELDİR B., SAĞLAM M.

AIP Conference Proceedings , sa.1833, ss.20080, 2017 (Scopus)

38. Nanorods/Nanostructral Vanadium Oxide Prepared bySpray Pyrolysis

ŞENARSLAN E., TAŞER A., GÜZELDİR B., SAĞLAM M.

AIP Conference Proceedings , sa.1833, ss.20089, 2017 (Scopus)

39. Characterization of deposited CdS thin films by Spray Pyrolysis method and used in Cd/CdS/p-Si/Al structure

ÖZAKIN O., Aktaş Ş., GÜZELDİR B., SAĞLAM M.

AIP Conference Proceedings , cilt.1833, ss.20092, 2017 (SCI-Expanded)

40. E. ŞENARSLAN, B. GÜZELDİR and M. SAĞLAM, Investigation of the electrical characteristics of Al/p-Si/Al Schottky diode

SAĞLAM M.

Journal of Physics: Conference Series , cilt.707, sa.707, ss.12013, 2016 (Scopus)

41. B. GÜZELDİR and M. SAĞLAM, Effects of ageing on the electrical characteristics of Zn/ZnS/n-GaAs/In structure

SAĞLAM M.

Journal of Physics: Conference Series , cilt.707, sa.707, ss.12016, 2016 (Scopus)

42. Temperature dependent electrical characteristics of Zn ZnSe n GaAs In structure

SAĞLAM M., GÜZELDİR B.

Journal of Physics: Conference Series , 2016 (SCI-Expanded)

43. M. SAĞLAM and B. GÜZELDİR, Temperature dependent electrical characteristics of Zn/ZnSe/n-GaAs/In structure

SAĞLAM M.

Journal of Physics: Conference Series , cilt.707, sa.707, ss.12025, 2016 (Scopus)

44. M. ABDOLAHPOUR SALARİ, E. ŞENARSLAN, B. GÜZELDİR and M. SAĞLAM, Effects of the ?-radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

SAĞLAM M.

Journal of Physics: Conference Series , cilt.707, sa.707, ss.12018, 2016 (Scopus)

45. Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

Salari M. A., Şenarslan E., Güzeldir B., Sağlam M.

Journal of Physics: Conference Series , cilt.707, ss.12018, 2016 (Scopus)

46. The effects of growth parameters on electrical characteristics of In2S3/n-InP junctions with In2S3 interfacial layer obtained by chemical spray pyrolysis method

Çakıcı T., Sağlam M.

MATERIALS TODAY : PROCEEDINGS , cilt.3, sa.5, ss.1262-1270, 2016 (Scopus)

47. Investigation of the effects of different thin film deposition parameters on electronic parameters of In2S3 n InP junctions at various temperatures

ÇAKICI T., SAĞLAM M.

International Journal of Thales Engineering Sciences , cilt.2, sa.2, ss.49-55, 2016 (Hakemli Dergi)

48. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization

GÜZELDİR B., SAĞLAM M.

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY , cilt.150, ss.111-119, 2015 (SCI-Expanded) Sürdürülebilir Kalkınma

49. Temperature dependent of electrical characteristics of Au/n-GaAs/In Schottky diode with In2S3 interfacial layer obtained by using spray pyrolysis method

Çakıcı T., Güzeldir B., Sağlam M.

JOURNAL OF ALLOYS AND COMPOUNDS , cilt.646, ss.954-965, 2015 (SCI-Expanded, Scopus)

50. The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode

ÇAKICI T., SAĞLAM M., GÜZELDİR B.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.28, ss.121-126, 2014 (SCI-Expanded, Scopus)

51. Conductance and series resistance measurements of polyaniline/p-Si and polypyrrole/InP junction devices

AYDOĞAN Ş., SAĞLAM M.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.46, ss.38-42, 2012 (SCI-Expanded, Scopus)

52. Some electrical and structural properties of Cd/CdS/n-Si/Au-Sb sandwich structure

GÜZELDİR B., SAĞLAM M., ATEŞ A.

SUPERLATTICES AND MICROSTRUCTURES , cilt.52, sa.3, ss.416-429, 2012 (SCI-Expanded)

53. Effect of temperature on the capacitance-frequency and conductance-voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies

AYDOĞAN Ş., SAĞLAM M., TÜRÜT A.

MICROELECTRONICS RELIABILITY , cilt.52, sa.7, ss.1362-1366, 2012 (SCI-Expanded, Scopus)

54. Effect of Sertraline in Indomethacin-Induced Gastric Mucosal Damage

Celebi F., Akbas A., SAĞLAM M., Kisaoglu A., Alp H. H.

ASIAN JOURNAL OF CHEMISTRY , cilt.24, sa.5, ss.1966-1970, 2012 (SCI-Expanded)

55. Influence of film thickness on structural and optical properties of ZnS thin films obtained by SILAR method and analysis of Zn/ZnS/n-GaAs/In sandwich structure

ÖZAKIN O., GÜZELDİR B., YILDIRIM M. A., SAĞLAM M., ATEŞ A.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , cilt.209, sa.4, ss.687-693, 2012 (SCI-Expanded)

56. ZnS thin film and Zn/ZnS/n-Si/Au-Sb sandwich structure grown with SILAR method and defining the characteristic parameters

Ates A., GÜZELDİR B., SAĞLAM M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.14, sa.1, ss.28-36, 2011 (SCI-Expanded)

57. Effects of SILAR cycle on the electrical characteristics of Cd/CdSe/n-Si/Au-Sb structure

GÜZELDİR B., SAĞLAM M., Ates A.

TURKISH JOURNAL OF PHYSICS , cilt.35, sa.1, ss.1-12, 2011 (ESCI)

58. Series resistance determination of Au/Polypyrrole/p-Si/Al structure by current-voltage measurements at low temperatures

AYDOĞAN Ş., SAĞLAM M., TURUT A., ONGANER Y.

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS , cilt.29, sa.4, ss.1486-1490, 2009 (SCI-Expanded, Scopus)

59. Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

Cimilli F. E., SAĞLAM M., EFEOĞLU H., Turut A.

PHYSICA B-CONDENSED MATTER , cilt.404, ss.1558-1562, 2009 (SCI-Expanded)

60. Temperature-dependent current-voltage and capacitance-voltage characteristics of the Ag/n-InP/In Schottky diodes

Cimilli F. E., EFEOĞLU H., SAĞLAM M., Tueruet A.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.20, sa.2, ss.105-112, 2009 (SCI-Expanded)

61. Reverse bias capacitance-voltage characteristics of Al/polyaniline/p-Si/Al structure as a function of temperature

AYDOĞAN Ş., SAĞLAM M., TUERUET A.

JOURNAL OF NON-CRYSTALLINE SOLIDS , cilt.354, ss.4991-4995, 2008 (SCI-Expanded, Scopus)

62. Effective atomic numbers of polypyrrole via transmission method in the energy range 15.74-40.93 keV

İÇELLİ O., ERZENEOĞLU S. Z., SAĞLAM M.

ANNALS OF NUCLEAR ENERGY , cilt.35, sa.3, ss.432-437, 2008 (SCI-Expanded)

63. Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures

AYDOĞAN Ş., SAĞLAM M., Tueruet A.

MICROELECTRONIC ENGINEERING , cilt.85, sa.2, ss.278-283, 2008 (SCI-Expanded, Scopus)

64. Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes

CİMİLLİ F. E., SAĞLAM M., Tueruet A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.22, sa.8, ss.851-854, 2007 (SCI-Expanded)

65. Aging effects on the interface state density obtained from current-voltage and capacitance-frequency characteristics of polypyrrole/p-Si/Al structure

SAĞLAM M., Türüt A.

JOURNAL OF APPLIED POLYMER SCIENCE , cilt.101, sa.4, ss.2313-2319, 2006 (SCI-Expanded)

66. Electrical properties of polypyrrole/p-InP structure

Aydogan S., Saglam M., TURUT A.

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS , cilt.44, sa.11, ss.1572-1579, 2006 (SCI-Expanded, Scopus)

67. The temperature dependence of current-voltage characteristics of the Au/Polypyrrole/p-Si/Al heterojunctions

Aydogan S., Saglam M., TURUT A.

JOURNAL OF PHYSICS-CONDENSED MATTER , cilt.18, sa.9, ss.2665-2676, 2006 (SCI-Expanded, Scopus)

68. On the some electrical properties of the non-ideal PPy/p-Si/Al structure

Aydogan S., Saglam M., TURUT A.

POLYMER , cilt.46, sa.24, ss.10982-10988, 2005 (SCI-Expanded, Scopus)

69. On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

Aydogan S., Saglam M., TURUT A.

APPLIED SURFACE SCIENCE , cilt.250, ss.43-49, 2005 (SCI-Expanded, Scopus)

70. Characterization of capacitance-frequency features of Sn/polypyrrole/n-Si structure as a function of temperature

Aydogan S., Saglam M., TURUT A.

POLYMER , cilt.46, sa.16, ss.6148-6153, 2005 (SCI-Expanded, Scopus)

71. Determination of the Characteristics Parameters of Polyaniline/p-type Si/Al Structures from the Current-Voltage Measurements

SAĞLAM M., BİBER M., AĞIRTAŞ M. S., ÇAKAR M., Türüt A.

INTERNATIONAL JOURNAL OF POLYMERIC MATERIALS , cilt.54, ss.805-813, 2005 (SCI-Expanded)

72. The effects of the temperature on current-voltage characteristics of Sn/polypyrrole/n-Si structures

Aydogan S., Saglam M., TURUT A., Onganer Y.

SYNTHETIC METALS , cilt.150, sa.1, ss.15-20, 2005 (SCI-Expanded, Scopus)

73. Current-voltage and capacitance-voltage characteristics of polypyrrole/p-InP structure

Aydogan S., Saglam M., TURUT A.

VACUUM , cilt.77, sa.3, ss.269-274, 2005 (SCI-Expanded, Scopus)

74. The effects of the temperature on the some parameters obtained from current-voltage and capacitance-voltage characteristics of polypyrrole/n-Si structure

Aydogan S., Saglam M., TURUT A.

POLYMER , cilt.46, sa.2, ss.563-568, 2005 (SCI-Expanded, Scopus)

75. The effects of the time-dependent on the characteristic parameters of polypyrrole/p-type Si/Al diode

SAĞLAM M., KORUCU D., Türüt A.

POLYMER , cilt.45, sa.21, ss.7335-7340, 2004 (SCI-Expanded)

76. The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure

SAĞLAM M., BİBER M., ÇAKAR M., Türüt A.

APPLIED SURFACE SCIENCE , cilt.230, ss.404-410, 2004 (SCI-Expanded)

77. Experimental determination of the laterally homogeneous barrier height of Au/n-Si Schottky barrier diodes

SAĞLAM M., CİMİLLİ F. E., Türüt A.

PHYSICA B-CONDENSED MATTER , cilt.348, ss.397-403, 2004 (SCI-Expanded)

78. Conductance and capacitance-frequency characteristics of polypyrrole/p-type silicon structures

ÇAKAR M., BİBER M., SAĞLAM M., Türüt A.

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS , cilt.41, sa.12, ss.1334-1338, 2003 (SCI-Expanded)

79. Au/n-Si Schottky diyotlarda omik kontak direncinin kapasite-frekans (C-f) karakteristiklerine etkisi

BATI B., TEMİRCİ C., SAĞLAM M., Türüt A.

Fırat Üniversitesi Fen ve Mühendislik Bilimleri Dergisi , cilt.13, sa.1, ss.33-38, 2001 (Hakemli Dergi)

80. High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process

Temircl C., BATI B., SAĞLAM M., Türüt A.

APPLIED SURFACE SCIENCE , cilt.172, ss.1-7, 2001 (SCI-Expanded)

81. On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact

BATI B., Nuhoğlu Ç., SAĞLAM M., Ayyıldız E., Türüt A.

PHYSICA SCRIPTA , cilt.61, sa.2, ss.209-212, 2000 (SCI-Expanded)

82. Current-voltage and capacitance-voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts

ABAY B., ONGANER Y., SAĞLAM M., EFEOĞLU H., Türüt A., Yoǧurtçu Y.

Microelectronic Engineering , cilt.51, ss.689-693, 2000 (SCI-Expanded, Scopus)

83. The effect of the time-dependent and expore time to air on Au/Epilayer n-Si Schottky Diodes

ÇETİNKARA H. A., SAĞLAM M., Türüt A., Yalçın N.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.6, ss.89-94, 1999 (SCI-Expanded)

84. On The Experimental Forward Capacitance-Voltage Characteristics of Schottky Barrier Diodes

Ayyıldız E., Nuhoğlu Ç., SAĞLAM M., Türüt A.

COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING , cilt.2, ss.3-7, 1999 (SCI-Expanded)

85. Cr/- and Fe/n-GaAs Schottky diodes: the stable current-voltage characteristic produced by high-temperature annealing

Nuhoğlu Ç., SAĞLAM M., TURUT A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.14, sa.1, ss.114-117, 1999 (SCI-Expanded)

86. The effect of thermal annealing on the series resistance of nearly ideal and ideal Ti/n-GaAs Schottky diodes

Ayyıldız E., SAĞLAM M., Nuhoğlu Ç., Türüt A.

PHYSICA SCRIPTA , cilt.58, sa.6, ss.636-639, 1998 (SCI-Expanded)

87. Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes

Nuhoğlu Ç., Ayyıldız E., SAĞLAM M., Türüt A.

APPLIED SURFACE SCIENCE , cilt.135, ss.350-356, 1998 (SCI-Expanded)

88. The effect of the exposing time to clean room air on characteristics parameters of Au/epilayer n-Si Schottky diodes

SAĞLAM M., Nuhoğlu Ç., Ayyıldız E., ÇETİNKARA H. A., Türüt A.

TURKISH JOURNAL OF PHYSICS , cilt.22, ss.377-387, 1998 (Scopus)

89. Thermal stability of Cr-Ni-Co alloy Schottky contacts on MBE n-GaAs

Turut A., GÜMÜŞ A., Saglam M., Tuzemen S., Efeoglu H., YALÇIN N., et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.13, sa.7, ss.776-780, 1998 (SCI-Expanded)

90. Effect of thermal annealing in nitrogen on the I-V and C-V characteristics of Cr-Ni-Co alloy/LEC n-GaAs Schottky diodes

SAĞLAM M., TURUT A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.12, sa.8, ss.1028-1031, 1997 (SCI-Expanded)

91. Influences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures

SAĞLAM M., TURUT A., Nuhoğlu Ç., EFEOĞLU H., Kılıçoğlu T., EBEOĞLU M. A.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.65, sa.1, ss.33-37, 1997 (SCI-Expanded)

92. Characteristics of metallic polymer and Au Schottky contacts on cleaved surfaces of InSe(:Er)

ABAY B., ONGANER Y., SAĞLAM M., EFEOĞLU H., TURUT A., YOĞURTÇU Y. K.

SOLID-STATE ELECTRONICS , cilt.41, sa.6, ss.924-926, 1997 (SCI-Expanded, Scopus)

93. M. SAĞLAM, E. AYYILDIZ, Ç. NUHOĞLU, B. BATI and A. TÜRÜT, Effects of anodization parameters on the thermal annealed pSi MOS structure

SAĞLAM M.

Proceedings Supplement of Balkan Physics Letters , cilt.5, sa.5, ss.820-823, 1997 (Hakemli Dergi)

94. Series resistance calculation for the metal-insulator-semiconductor Schottky barrier diodes

Saglam M., Ayyıldız E., GÜMÜŞ A., Turut A., Efeoglu H., Tuzemen S.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , cilt.62, sa.3, ss.269-273, 1996 (SCI-Expanded)

95. Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

Ayyildiz E., Türüt A., EFEOĞLU H., TÜZEMEN S., SAĞLAM M., Yoǧurtçu Y. K.

Solid-State Electronics , cilt.39, sa.1, ss.83-87, 1996 (SCI-Expanded)

96. High barrier metallic polymer/p-type silicon Schottky diodes

ONGANER Y., SAĞLAM M., Türüt A., EFEOĞLU H., TÜZEMEN S.

Solid-State Electronics , cilt.39, sa.5, ss.677-680, 1996 (SCI-Expanded)

97. The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect

TURUT A., BATI B., KÖKÇE A., SAĞLAM M., Yalçın N.

PHYSICA SCRIPTA , cilt.53, sa.1, ss.118-122, 1996 (SCI-Expanded)

98. Origin and frequency dependence of the anomalous peak in forward capaticance-voltage characteristics of Schottky diodes

Türüt A., SAĞLAM M., BATI B., KÖKÇE A.

TURKISH JOURNAL OF PHYSICS , cilt.19, ss.601-612, 1995 (Scopus)

99. INTERPRETING THE NONIDEAL REVERSE BIAS C-V CHARACTERISTICS AND IMPORTANCE OF THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT ON APPLIED VOLTAGE

TURUT A., SAĞLAM M., EFEOĞLU H., Yalçın N., YILDIRIM M., ABAY B.

PHYSICA B , cilt.205, sa.1, ss.41-50, 1995 (SCI-Expanded, Scopus)

100. Polyindole-based Schottky diode

KÖLELİ F., SAĞLAM M., TURUT A., EFEOĞLU H.

TURKISH JOURNAL OF CHEMISTRY , cilt.18, ss.22-27, 1994 (SCI-Expanded)

101. Parameter extraction from non-ideal C-V characteristic of a Schottky diode with and without interfacial layer

Türüt A., Yalçın N., SAĞLAM M.

SOLID-STATE ELECTRONICS , cilt.35, sa.6, ss.835-841, 1992 (SCI-Expanded)

102. Al/n-Si Schottky diyodlarının ideal olmayan I-V, C-V karakteristikleri ve arayüzey hallerinin enerji dağılımı

Türüt A., SAĞLAM M.

Erciyes Üniversitesi Fen Bilimleri Dergisi , cilt.8, sa.1, ss.1350-1361, 1992 (Hakemli Dergi) Sürdürülebilir Kalkınma

103. Determination of the density of Si-metal interface states and excess capaticance caused by them

TURUT A., SAĞLAM M.

PHYSICA B-CONDENSED MATTER , cilt.179, ss.285-294, 1992 (SCI-Expanded)

104. Barrier height enhancement by annealing CrNiCo alloy Schottky contacts on LEC GaAs

Türüt A., Tüzemen S., YILDIRIM M., ABAY B., SAĞLAM M.

Solid State Electronics , cilt.35, sa.10, ss.1423-1426, 1992 (SCI-Expanded, Scopus)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 163

1. Au/n-GaAs/In SCHOTTKY DİYODUN ELEKTRİKSEL KARAKTERİSTİKLERİNİN İNCELENMESİ

Şenarslan E., Sağlam M.

4. Palandöken Kongresi, Erzurum, Türkiye, 28 - 29 Nisan 2022, ss.431-440, (Tam Metin Bildiri)

2. Graphene Oxide Assmbled Au-based Nanocomposite for Temperature Dependent lnP Heterojunction Devices

KANMAZ İ., BALTAKESMEZ A., AYKAÇ C., GÜZELDİR B., SAĞLAM M.

Turkish Physical Society 35th International Physics Congress, Türkiye, 4 - 08 Eylül 2019, (Tam Metin Bildiri)

3. Temperature Dependent Electrical Characteristics of Au/In2S3/n-InP/In Diode

ÇAKICI T., SAĞLAM M.

3rd International Conference on Advanced Engineering Technologies (ICADET, Bayburt, Türkiye, 19 - 21 Eylül 2019, cilt.25, ss.1128-1133, (Tam Metin Bildiri)

4. Transferring of Graphene Obtained on Copper Foilby Chemical Vapour Deposition(CVD) Techniqueand Investigation of Its Optical, Structural andCharacteristic Parameters

AYKAÇ C., ÖZAKIN O., BAYRAM Ö., GÜZELDİR B., SAĞLAM M.

INTERNATIONAL CONFERENCE ON ADVANCESIN NATURAL APPLIED SCIENCES(ICANAS19), Ağrı, Türkiye, 19 - 21 Haziran 2019, (Özet Bildiri)

5. Electrical Characteristic of Au/Graphene/p-Si/AlSchottky Diode Depend on Annealing Temperature

ÖZAKIN O., BAYRAM Ö., AYKAÇ C., GÜZELDİR B., SAĞLAM M.

INTERNATIONAL CONFERENCE ONADVANCES INNATURAL APPLIED SCIENCES(ICANAS19), Ağrı, Türkiye, 19 - 21 Haziran 2019, (Özet Bildiri)

6. Different ratios of Au-Ag and Au-Cu alloys for electrical characteristics of Au-Ag/n-GaAs/In and Au-Cu/n-GaAs/In Schottky diodes in the wide temperature range

KÜP S., KANMAZ İ., GÜZELDİR B., SAĞLAM M.

4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Türkiye, 19 - 22 Haziran 2019, ss.2, (Özet Bildiri)

7. The Annealing Effects Of The Electrical Characteristics In Au-Cu/n-GaAs/In And Ag-Cu/n-GaAs/In Schottky Diodes By Means Of Different Ratios Au-Cu And Ag-Cu Alloys

KANMAZ İ., KÜP S., GÜZELDİR B., SAĞLAM M.

4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Türkiye, 19 - 22 Haziran 2019, ss.1, (Özet Bildiri)

8. Characteristic of Au/Graphene/p-Si/Al Schottky Diode Depend on Annealing Temperature

ÖZAKIN O., AYKAÇ C., GÜZELDİR B., SAĞLAM M.

4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Türkiye, 19 - 22 Haziran 2019, ss.7, (Özet Bildiri)

9. Examination of some basic electrical properties of Au /p-Si/Al, Au/GO/p-Si/Al and Au/Au-RGO/p-Si/Al structures

ODABAŞ M., TAŞER A., KUDAŞ Z., GÜZELDİR B., SAĞLAM M.

4th INTERNATIONAL CONFERENCE ON ADVANCES IN NATURAL & APPLIED SCIENCES (ICANAS 2019), Ağrı, Türkiye, 19 - 22 Haziran 2019, ss.3, (Özet Bildiri)

10. THE EFFECT OF GO AND AU-RGO INTERFACIAL LAYERS ON AU/p-Si RECTIFYING CONTACT PARAMETERS AT ROOM TEMPERATURE

TAŞER A., SAĞLAM M., GÜZELDİR B., EKİNCİ D.

MAS INTERNATIONAL CONFERENCE ON MATHEMATICS-ENGINEERING-NATURAL&MEDICAL SCIENCES-V, Erzurum, Türkiye, 2 - 05 Mayıs 2019, ss.311-0, (Tam Metin Bildiri)

11. EFFECTS OF THERMAL ANNEALING ON DIODE PARAMETERS FROM C-VMEASUREMENTS OF THE Cd/CdS/n-GaAs/In AND Cd/CdSe/n-GaAs/InSTRUCTURES

YILDIRIM F., Orhan Z., GÜZELDİR B., SAĞLAM M.

MAS INTERNATIONAL CONFERENCEON MATHEMATICS-ENGINEERING-NATURALMEDICAL SCIENCES-V, 2 - 05 Mayıs 2019, ss.622-634, (Tam Metin Bildiri)

12. THE COMPARISON OF CURRENT -VOLTAGE CHARACTERISTICS OF Au/n-Si/Ti, AuAg/n-Si/Ti AND AuCu/n-Si/Ti SCHOTTKY DIODES AT ROOM TEMPERATURE

ORHAN Z., YILDIRIM F., TAŞER A., GÜZELDİR B., SAĞLAM M.

MAS INTERNATIONAL CONFERENCE ON MATHEMATICS-ENGINEERING-NATURAL&MEDICAL SCIENCES-V, Erzurum, Türkiye, 2 - 05 Mayıs 2019, ss.635-0, (Tam Metin Bildiri)

13. Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses

SALARİ M. A., ŞAHİN Y., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018, (Özet Bildiri)

14. THE EFFECTS OF THERMAL ANNEALING ON Al/n-InP/In SCHOTTKY BARRIER HEIGHT AS A FUNCTION OF SAMPLE TEMPERATURE

CİMİLLİ ÇATIR F. E., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018, (Tam Metin Bildiri)

15. EFFECTS OF GOLD WEIGHT RATE ON THE ELECTRICAL CHARACTERISTICS OF CuAuAg/n-Si/Ti SCHOTTKY DIODE

ORHAN Z., TAŞER A., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018, (Tam Metin Bildiri)

16. Effects of Aging on the Electrical Properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky Diodes

TAŞER A., ORHAN Z., AYKAÇ C., ÖZAKIN O., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018, (Özet Bildiri)

17. TIME DEPENDENT ELECTRICAL PROPERTIES OF Au/n-Si/Ti, AG/n-Si/Ti AND AuAg/n-Si/Ti SCHOTTKY DIODES

TAŞER A., ORHAN Z., AYKAÇ C., ÖZAKIN O., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018, (Tam Metin Bildiri)

18. The temperature dependence of current-voltage characteristics of CuAuAg/n-Si/Ti Schottky diode

ORHAN Z., TAŞER A., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018, (Özet Bildiri)

19. CALCULATION OF SOME PARAMETERS OF THE ZnO INTERFACIAL Zn/n-Si JUNCTION DEPENDING ON THE ELECTRON RADIATION APPLIED AT DIFFERENT DOSES THAN THE CAPACITY-VOLTAGE CHARACTERISTICS

SALARİ M. A., MERHAN MUĞLU G., GÜZELDİR B., SAĞLAM M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD-2018), 28-30 August 2018, Ardahan University, Ardahan, TURKEY, 28 - 30 Ağustos 2018, (Tam Metin Bildiri)